Semiconductor Device Integrating High-Resistance Element for Voltage Detection
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Solution Overview
Problem
Conventional switching power supplies require external high-breakdown voltage and high-resistance elements, increasing component costs and assembly complexity, while also being difficult to miniaturize due to the need for these elements to detect input voltage effectively.
Innovation Solution
A semiconductor device with a very resistive element integrated into the semiconductor substrate, featuring a high breakdown voltage and high electrical resistance, which is used in conjunction with field effect transistors and resistors to form a control IC that reduces the need for external components, thereby simplifying the power supply system and reducing size and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If external high-breakdown voltage and high-resistance elements are used for voltage detection, then voltage detection accuracy is improved, but component count and assembly complexity increase
Solution Approach 1:
The patent integrates the high-breakdown voltage and high-resistance elements directly into the semiconductor substrate, merging previously external discrete components with the control IC. This integration eliminates the need for separate external high-voltage resistors and simplifies assembly while maintaining voltage detection accuracy through on-chip implementation.
2Measurement precision
If external high-breakdown voltage and high-resistance elements are used, then voltage detection capability is improved, but device size increases
Solution Approach 1:
By integrating the voltage detection elements directly into the semiconductor substrate, the patent consolidates multiple functions (control IC, high-voltage detection, high-resistance elements) into a single integrated device, thereby reducing the overall device size compared to using separate external components.
3Reliability
If external high-breakdown voltage elements are used, then reliability is improved, but component count increases
Solution Approach 1:
The integration of high-breakdown voltage elements and high-resistance elements into the semiconductor substrate reduces the total component count by eliminating external discrete components. This merger maintains reliability through on-chip integration while simplifying the overall system architecture.
4Measurement precision
If discrete high-resistance elements are used for voltage division, then voltage detection accuracy is improved, but manufacturing cost increases
Solution Approach 1:
By integrating the high-resistance voltage division elements directly into the semiconductor substrate, the patent eliminates the need for external discrete high-voltage resistors. This integration reduces manufacturing cost through simplified assembly processes and fewer external components while maintaining voltage detection accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a high-breakdown voltage and high-resistance very resistive element within the semiconductor device allows for a compact and cost-effective switching power supply with improved voltage detection accuracy, reducing component counts and assembly complexity.
Implementation Method 1
a very resistive element exhibiting a high breakdown voltage and high electrical resistance
Data Source
AI summary
A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element.