Semiconductor Device Hydrogen Absorbing Alloy Gate Electrode

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Solution Overview

Problem

Oxide semiconductor devices in display devices face challenges with increased water and hydrogen sensitivity during the annealing process, leading to conductor-like behavior and high wiring resistance, which requires expensive low-resistance materials and complicates transistor performance.

Innovation Solution

The semiconductor device incorporates a hydrogen-absorbing alloy for the gate electrode and source/drain electrodes, using copper (Cu) with manganese (Mn) or layered structures of copper and titanium (Ti) or aluminum (Al) to absorb hydrogen, reducing diffusion and enhancing transistor performance without introducing new materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If oxide semiconductor is used in transistor manufacturing with heat treatment (annealing), then the transistor can be formed, but water and hydrogen from insulating films reduce the oxide semiconductor, causing it to behave like conductors instead of semiconductors

Engineering Contradiction:

Improvetransistor performanceVSAvoidwater and hydrogen sensitivity

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A hydrogen-absorbing alloy layer is introduced as an intermediary between the oxide semiconductor layer and the gate electrode. This alloy layer absorbs hydrogen that diffuses from the gate electrode during annealing, preventing hydrogen from reaching and reducing the oxide semiconductor layer, thus maintaining its semiconductor properties

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The hydrogen that would normally harm the oxide semiconductor by causing reduction is instead captured and absorbed by the hydrogen-absorbing alloy layer, converting a harmful element into a beneficial protective mechanism

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If low resistance wiring materials are used to reduce wiring resistance, then wiring resistance decreases, but these materials are susceptible to oxidation, requiring reduction treatment that introduces hydrogen which then diffuses to oxide semiconductor

Engineering Contradiction:

Improvewiring resistanceVSAvoidhydrogen diffusion

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The hydrogen-absorbing alloy layer serves as a protective intermediary between the low-resistance wiring and the oxide semiconductor layer, capturing hydrogen from the wiring's reduction treatment and preventing its diffusion to the semiconductor layer

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The hydrogen-absorbing alloy layer automatically absorbs and traps hydrogen that attempts to diffuse toward the oxide semiconductor, providing self-protection without requiring additional process steps or external intervention

Inventive Principle:

Principle #25Self-service

3Area of stationary object

If display device size is increased to achieve high definition, then screen size and definition improve, but wiring length increases causing higher resistance that cannot be ignored

Engineering Contradiction:

Improvedisplay device sizeVSAvoidwiring resistance

Core Design Contradiction:

Area of stationary objectVSReliability

Solution Approach 1:

The electrical resistance parameter of the wiring is improved by using low-resistance materials and optimizing the wiring structure, allowing the display device to be scaled up in size without proportionally increasing wiring resistance

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves the on-state current and reduces the time constant of the transistor, enhancing performance and reliability while avoiding the need for costly new materials, thus addressing the sensitivity issues and resistance challenges.

Implementation Method 1

The first gate electrode, the source electrode, and the drain electrode are either an electrode consisting of copper (Cu) containing manganese (Mn), an electrode having a layered structure of layers containing copper and titanium (Ti), or an electrode having a layered structure of layers containing titanium and aluminum (Al)

Methodology Applied

Scientific EffectHydrogen absorption: Absorption (physical)

Data Source

PatentUS20230395688A1Semiconductor device

Publication Date: 2023.12.07 MAGNOLIA WHITE CORP

AI summary

A semiconductor device including a first gate electrode, a first gate insulating film in contact with the first gate electrode, an oxide semiconductor layer in contact with the first gate insulating film, and a source electrode and a drain electrode electrically connected to the semiconductor layer, wherein the first gate electrode, the source electrode, and the drain electrode are either an electrode consisting of copper (Cu) containing manganese (Mn), an electrode having a layered structure of layers containing copper and titanium (Ti), or an electrode having a layered structure of layers containing titanium and aluminum (Al), and the first gate electrode includes a different metal from the source electrode and drain electrode.