Semiconductor Diffusion Barrier Layers for Hydrogen-Resistant 3D Memory
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity and maintaining electrical performance due to hydrogen diffusion issues during high integration density, leading to defective circuit devices.
Innovation Solution
Incorporation of a diffusion barrier layer with a material having lower hydrogen permeability than silicon nitride, such as two-dimensional materials like graphene or hexagonal boron nitride, to prevent hydrogen diffusion and enhance integration density while maintaining electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen barrier properties are improved by increasing the thickness of the diffusion barrier layer, then hydrogen diffusion prevention is enhanced, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent applies composite materials by combining multiple barrier layer materials with different hydrogen barrier properties. The diffusion barrier layer includes a first material layer (e.g., silicon nitride) and a second material layer (e.g., silicon oxide or silicon oxynitride) with different hydrogen permeability characteristics. This composite structure achieves superior hydrogen diffusion prevention compared to single-material layers of equivalent or greater thickness, resolving the contradiction between reliability improvement and device complexity avoidance.
2Quantity of substance
If integration density is increased to enhance data storage capacity, then storage capacity improves, but hydrogen diffusion causes defective circuit devices
Solution Approach 1:
The patent applies local quality by positioning the diffusion barrier layer specifically at critical locations where hydrogen diffusion would cause damage to circuit devices. Rather than uniformly protecting the entire device, the barrier layer is strategically placed in regions where integration density increases the risk of hydrogen-related defects. This localized approach maintains circuit device functionality while enabling higher integration density for improved data storage capacity.
Solution Approach 2:
The diffusion barrier layer acts as an intermediary between the peripheral circuit structure and the memory cell structure. It mediates the harmful effect of hydrogen diffusion that occurs during high integration density manufacturing, protecting the circuit devices from hydrogen damage while allowing the high-density memory structure to function. This intermediary layer enables the system to achieve high data storage capacity without sacrificing circuit device reliability.
3Ease of manufacture
If a conventional diffusion barrier layer is used, then manufacturing is simpler, but hydrogen permeability is insufficient to prevent defects
Solution Approach 1:
The patent employs composite materials consisting of a first material layer and a second material layer with complementary hydrogen barrier properties. This composite structure achieves superior hydrogen barrier performance that exceeds what would be possible with conventional single-material layers, while still using materials and fabrication techniques that are compatible with existing semiconductor manufacturing processes. The combination of silicon nitride and silicon oxide or silicon oxynitride provides enhanced hydrogen permeability resistance without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents defects in circuit devices and improves productivity by reducing hydrogen diffusion, thereby enhancing the semiconductor device's integration density and electrical performance without increasing the thickness of the diffusion barrier layer.
Implementation Method 1
a diffusion barrier layer on the lower insulating layer... the diffusion barrier layer includes a first material layer having a hydrogen permeability lower than a hydrogen permeability of silicon nitride
Data Source
AI summary
A semiconductor device includes a peripheral circuit structure including: a first substrate, circuit devices on the first substrate, a lower wiring structure electrically connected to the circuit devices, a lower insulating layer covering the lower wiring structure, and a diffusion barrier layer on the lower insulating layer; and a memory cell structure including a second substrate including first and second regions on the peripheral circuit structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate in the first region and extending in a second direction perpendicular to the first direction to form a staircase shape in the second region, and channel structures penetrating the gate electrodes in the first direction and each including a channel layer. The diffusion barrier layer includes a first material layer having a hydrogen permeability lower than a hydrogen permeability of silicon nitride.