Semiconductor Device Hydrogen Diffusion Mitigation
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Solution Overview
Problem
Metal oxide semiconductors in semiconductor devices are susceptible to hydrogen diffusion from silicon nitride (SiN) insulation layers, which affects their electrical properties.
Innovation Solution
A semiconductor device structure and manufacturing method involving a substrate with a first SiN layer, a second SiN layer with lower hydrogen concentration and thickness, and an oxide insulation layer, where the second SiN layer is positioned between the metal oxide layer and the substrate to mitigate hydrogen diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon nitride (SiN) insulation layer is used to insulate the metal oxide semiconductor, then the insulation performance is improved, but hydrogen diffusion from the SiN layer degrades the electrical properties of the metal oxide semiconductor
Solution Approach 1:
An oxide insulation layer is introduced as an intermediary between the SiN layer and the metal oxide semiconductor layer. This intermediate layer acts as a barrier to hydrogen diffusion while maintaining the insulation function, thereby protecting the metal oxide semiconductor from hydrogen contamination caused by the SiN layer.
Solution Approach 2:
The patent employs a composite insulation structure combining SiN layer and oxide insulation layer. The SiN layer provides primary insulation performance, while the oxide insulation layer provides hydrogen barrier functionality. This composite structure simultaneously achieves high insulation performance and effective hydrogen diffusion prevention.
2Volume of moving object
If metal oxide semiconductor materials are used to reduce TFT volume, then the device size is reduced, but susceptibility to hydrogen diffusion increases
Solution Approach 1:
The oxide insulation layer serves as a protective intermediary between the environment (including SiN layers containing hydrogen) and the metal oxide semiconductor. This mediator prevents hydrogen from reaching the metal oxide semiconductor, thereby enabling the use of compact metal oxide TFTs without suffering from hydrogen-induced electrical property degradation.
3Ease of manufacture
If a single SiN layer is used for insulation, then the manufacturing process is simple, but hydrogen concentration in the metal oxide layer increases
Solution Approach 1:
The patent adopts a composite insulation structure consisting of SiN layer and oxide insulation layer. While this increases the number of layers compared to a single SiN layer, the oxide layer can be formed using standard semiconductor manufacturing processes such as PECVD or sputtering, thereby maintaining manufacturing simplicity while effectively reducing hydrogen concentration in the metal oxide layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the hydrogen concentration in the metal oxide layer, improving the electrical properties and reliability of the semiconductor device.
Implementation Method 1
Metal oxide semiconductors are susceptible to hydrogen diffusion from silicon nitride (SiN) insulation layers, which affects their electrical properties
Implementation Method 2
a hydrogen concentration of the second SiN layer is lower than a hydrogen concentration of the first SiN layer
Data Source
AI summary
A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate, a first silicon nitride (SiN) layer, a second SiN layer, an oxide insulation layer, and a first metal oxide layer. The first SiN layer is located on or above the substrate. The second SiN layer is located above the first SiN layer. Both the first SiN layer and the second SiN layer include a hydrogen element. The second SiN layer has a hydrogen concentration lower than that of the first SiN layer and a thickness less than that of the first SiN layer. The oxide insulation layer is located on the second SiN layer. The first metal oxide layer is located on the oxide insulation layer. The second SiN layer is located between the first metal oxide layer and the substrate.