Semiconductor Insulating Layer Impurity Gradient for Breakdown Voltage
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal breakdown voltage and low on-resistance due to limitations in the distribution and concentration of impurities within the insulating and semiconductor regions.
Innovation Solution
The semiconductor device incorporates a specific profile of impurity concentration in the insulating member, with varying concentrations of elements like hydrogen, helium, argon, or carbon along the Z-axis direction, and strategically positions these elements to enhance breakdown voltage while reducing on-resistance by modifying the carrier concentrations in semiconductor regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform impurity distribution is used in the insulating member, then manufacturing is simple, but breakdown voltage is insufficient
Solution Approach 1:
The insulating member is designed with non-uniform impurity distribution where different regions have different impurity concentrations. Specifically, the impurity concentration is higher near the semiconductor member interface and lower toward the electrode interface, creating local variations that optimize both breakdown voltage and electrical characteristics in different regions of the insulating member.
2Reliability
If high impurity concentration is used throughout the insulating member, then on-resistance is reduced, but breakdown voltage decreases
Solution Approach 1:
The impurity concentration parameter is varied continuously or in steps through the thickness of the insulating member. The concentration is highest at the semiconductor member interface, decreases through the middle region, and is lowest near the electrode interface. This parameter gradient allows optimization of both breakdown voltage and on-resistance by controlling carrier concentration in different regions.
3Reliability
If simple insulating member structure is used, then manufacturing is easy, but electrical characteristics are insufficient
Solution Approach 1:
The insulating member is formed with the desired non-uniform impurity distribution profile before final device assembly. This preliminary structuring of the insulating member with controlled impurity gradients enables subsequent manufacturing steps to proceed more easily while maintaining optimized electrical characteristics.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode. A portion of the insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the conductive member.