Semiconductor Package Inductor Integration Warpage Control
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Solution Overview
Problem
The semiconductor industry faces challenges in efficiently integrating passive devices like inductors with active devices due to area wastage, warpage issues, and reliability concerns caused by different thermal expansion coefficients, leading to reduced production yield and increased costs.
Innovation Solution
A method is introduced where the operations for manufacturing inductors and active devices are performed separately, with inductors formed over a carrier substrate having a suitable coefficient of thermal expansion, allowing for improved warpage control and reducing the need for dummy regions, thus enhancing integration density and reducing waste.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If passive devices and active devices are integrated on the same wafer, then integration density is improved, but area wastage increases due to dummy regions
Solution Approach 1:
The patent divides the manufacturing process into separate segments: passive devices are formed on a first wafer while active devices are formed on a second wafer. This segmentation allows each wafer to be optimized independently, eliminating the need for dummy regions on the active device wafer and maximizing the usable area of both wafers.
Solution Approach 2:
The patent introduces an intermediary carrier substrate to transfer the passive devices from the first wafer to the second wafer. This intermediary enables the passive devices to be relocated to the optimal position on the second wafer, allowing complete utilization of the second wafer area without requiring dummy regions.
2Productivity
If passive devices and active devices are manufactured together, then production efficiency is improved, but warpage issues increase due to different thermal expansion coefficients
Solution Approach 1:
The manufacturing process is segmented into separate stages on different wafers. Passive devices are fabricated on a first wafer while active devices are fabricated on a second wafer, allowing each wafer to be processed under optimized conditions without thermal expansion mismatches affecting both device types simultaneously.
Solution Approach 2:
Passive devices are preliminarily formed on the first wafer and then transferred to the carrier substrate before the active devices are completed on the second wafer. This preliminary action allows the passive devices to be prepared in advance and relocated, eliminating warpage issues that would arise from co-manufacturing on the same wafer.
3Device complexity
If passive devices are formed early on the same wafer, then process integration is improved, but reliability decreases due to connection issues between qualified devices
Solution Approach 1:
The patent segments the device fabrication into separate processes on different wafers, allowing independent optimization and qualification testing of passive and active devices before their final assembly. This ensures that only qualified devices are connected, improving reliability while maintaining process integration through the carrier substrate transfer mechanism.
Solution Approach 2:
The carrier substrate acts as an intermediary that enables the passive devices to be transferred and repositioned on the second wafer. This intermediary mechanism ensures proper alignment and connection between qualified passive and active devices, improving connection reliability while maintaining high process integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more efficient use of wafer area, reduces warpage, and improves the reliability of semiconductor packages by ensuring qualified connections between inductors and active devices, leading to increased integration density and smaller form factors.
Implementation Method 1
inductors formed over a carrier substrate having a suitable coefficient of thermal expansion, allowing for improved warpage control
Data Source
AI summary
A semiconductor package structure includes an interconnection structure having a first surface and a second surface opposite to the first surface, a die surrounded by a molding compound over the first surface of the interconnection structure, and a passive device surrounded by a dielectric structure over the second surface of the interconnection structure. The passive device is electrically coupled to the die by the interconnection structure.