Semiconductor Inductor Via Alignment via Segmented Insulating Films

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Solution Overview

Problem

Existing semiconductor devices with inductors face challenges in miniaturization due to limitations in alignment accuracy, leading to increased size from larger second openings formed to accommodate via connections through protective films.

Innovation Solution

A semiconductor device design featuring a multilayer wiring layer with a first and second insulating film, where the second opening in the organic film only communicates with the first opening, allowing the via to contact the first insulating film without contacting the second, enabling precise via placement and reducing device size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the second opening is formed to accommodate alignment inaccuracies, then the via connection reliability is improved, but the device size increases

Engineering Contradiction:
Improvevia connection reliabilityVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The protective film is divided into two separate insulating films (first and second insulating films) with different functions. The first insulating film provides via embedding with precise alignment, while the second insulating film provides additional protection without requiring alignment with the via opening. This segmentation allows the second opening to be smaller since it only needs to communicate with the first opening, not accommodate alignment margins.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The solution moves the alignment tolerance requirement from the planar dimension (where the second opening would need to be larger) to the vertical dimension. The first insulating film is formed thicker to provide sufficient embedding depth for the via, allowing the second opening to be smaller in planar dimensions while still maintaining reliability through the combined thickness of both insulating films.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the via contacts both insulating films, then the protective coverage is improved, but the manufacturing precision requirement increases

Engineering Contradiction:
Improveprotective coverageVSAvoidalignment accuracy
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The protective function is segmented between two insulating films: the first insulating film provides via embedding and electrical isolation, while the second insulating film provides additional mechanical protection and planar coverage. This segmentation allows each film to be optimized independently, with the second film not requiring precise alignment with the via opening.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first insulating film acts as an intermediary that mediates between the via structure and the second insulating film. It provides the necessary embedding depth and electrical isolation, allowing the second insulating film to be formed without requiring precise alignment with the via opening, thus reducing manufacturing precision requirements.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS11282917B2Semiconductor device and method of manufacturing the same
Publication Date: 2022.03.22 RENESAS ELECTRONICS CORP
  • US11282917B2 patent drawing
  • US11282917B2 patent drawing
  • US11282917B2 patent drawing

AI summary

A semiconductor device including a multilayer wiring layer comprising a first wiring, a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring, a second insulating film formed on the first insulating film and having a second opening continuing with the first opening, and an inductor formed of the first wiring, and a second wiring electrically connected with the first wiring through a via formed in the first opening. A side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.