Semiconductor Inspection Device Dual Mode Electron Beam Optical

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing semiconductor inspection methods only detect abnormalities in pattern dimensions, failing to account for device defects caused by electrical characteristics or material properties.

Innovation Solution

A semiconductor inspection device with dual modes: a first measurement mode using an electron beam and light to evaluate electrical characteristics, and a second measurement mode for detailed inspection using an electron beam and light, allowing for the detection of abnormalities in electrical characteristics and material properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If only optical inspection is used to detect pattern dimension abnormalities, then inspection speed is high, but defect detection coverage is incomplete (cannot detect electrical characteristic defects)

Engineering Contradiction:

Improveinspection speedVSAvoiddefect detection coverage

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent merges optical inspection and electron beam inspection into a single integrated system. The optical inspection unit performs high-speed screening to detect pattern dimension abnormalities, while the electron beam inspection unit provides detailed analysis for electrical characteristic defects. The control unit coordinates both units to share the same sample stage and detection resources, achieving both high inspection speed and comprehensive defect detection coverage.

Inventive Principle:

Principle #5Merging (Combining)

2Reliability

If electron beam inspection is used to detect electrical characteristic defects, then defect detection coverage is improved, but inspection speed decreases

Engineering Contradiction:

Improvedefect detection coverageVSAvoidinspection speed

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The inspection process is segmented into two stages: a first measurement mode using optical inspection for high-speed preliminary screening of the entire sample, and a second measurement mode using electron beam inspection for detailed analysis only of regions where abnormalities are detected. This segmentation allows the system to maintain high overall inspection speed while ensuring comprehensive defect detection coverage through targeted electron beam analysis.

Inventive Principle:

Principle #1Segmentation

3Adaptability or versatility

If dual measurement modes are implemented, then both high-speed optical inspection and detailed electron beam inspection are achieved, but device complexity increases

Engineering Contradiction:

Improvemeasurement mode flexibilityVSAvoidsystem structure

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent implements a universal inspection system where a single device can perform multiple inspection functions through two measurable modes. The optical inspection unit and electron beam inspection unit share common components such as the sample stage, detection systems, and control unit. This multi-functionality allows the system to adapt to different inspection needs (high-speed screening vs. detailed analysis) without requiring completely separate inspection devices, thereby managing complexity while enhancing versatility.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables high-speed optical inspection and detailed evaluation of semiconductor samples, effectively identifying and analyzing abnormalities in electrical characteristics and material properties, improving defect detection accuracy.

Implementation Method 1

an electron optical system configured to irradiate a sample with an electron beam; an electron detector configured to detect a signal electron generated when the sample is irradiated with an electron beam

Methodology Applied

Scientific EffectElectron beam interaction: Electron Beam

Implementation Method 2

an optical system configured to irradiate the sample with light; a photodetector configured to detect signal light generated when the sample is irradiated with light

Methodology Applied

Scientific EffectOptical interaction: Light

Data Source

PatentUS12196802B2Semiconductor inspection device and method for inspecting semiconductor sample

Publication Date: 2025.01.14 HITACHI HIGH TECH CORP

AI summary

A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.