Semiconductor Inspection Using Overlapping Light Irradiation Patterns
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Solution Overview
Problem
Existing semiconductor device inspection methods require extended time to detect defects due to large intervals between light irradiation portions, potentially leading to overlooked defects, necessitating a balance between inspection speed and accuracy.
Innovation Solution
A method involving multiple stages of light irradiation and output analysis, where initial and subsequent irradiation steps cover different areas, ensuring accurate detection by overlapping scan ranges and reducing the number of irradiated portions, thereby shortening inspection time without compromising accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the interval between light irradiation portions is increased to shorten inspection time, then productivity is improved, but measurement precision deteriorates due to potential overlooking of defective portions
Solution Approach 1:
The inspection process is divided into multiple segments: a first inspection using a predetermined light irradiation pattern, and a second inspection using a different light irradiation pattern. This segmentation allows each inspection to cover different portions of the area, ensuring that defective portions are not overlooked while maintaining efficient inspection speed.
Solution Approach 2:
The first light irradiation pattern inspects only a portion of the area to be inspected, rather than covering the entire area. This partial action reduces the inspection time for the first pass, and the second pattern complements it by covering remaining areas, achieving overall complete inspection with reduced total time.
2Measurement precision
If multiple light irradiation patterns are used to ensure defect detection accuracy, then measurement precision is improved, but device complexity increases due to multiple inspection steps
Solution Approach 1:
The inspection device performs inspections periodically using different light irradiation patterns. The first pattern is applied in a first period, and the second pattern is applied in a second period. This periodic alternation between different patterns ensures comprehensive defect detection while maintaining a systematic and manageable inspection process.
Solution Approach 2:
The light irradiation pattern parameter is changed between the first and second inspections. By varying the pattern parameter, the inspection covers different portions of the area with each inspection, improving defect detection accuracy without requiring fundamentally different inspection mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures accurate detection of defects while significantly reducing the time required for inspection by strategically arranging irradiation portions and overlapping scan ranges, enhancing the efficiency of the semiconductor device inspection process.
Implementation Method 1
inspection irradiation for emitting light while a test signal is being input to a semiconductor device is performed on an area to be inspected of the semiconductor device
Data Source
AI summary
A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.


