Semiconductor Insulating Layer Layout for Resin Shrinkage Control
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Solution Overview
Problem
The shrinkage of resin material portions in semiconductor devices can affect the surrounding structures, leading to potential failures and performance issues due to the lack of effective suppression methods in existing manufacturing processes.
Innovation Solution
A semiconductor device design featuring a first insulating layer with an annular shape over the electrode's peripheral edge and a second insulating layer made of resin material, where the second layer's outer end boundary lines are configured to protrude in both directions, effectively covering the first layer and mitigating shrinkage effects, along with a manufacturing method that includes forming and heating the second insulating layer to maintain coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resin material portion is formed to cover the electrode peripheral edge, then the electrode is protected and insulation is improved, but the resin material shrinks during manufacturing which affects the surrounding structures and may expose the electrode
Solution Approach 1:
The first insulating layer is formed beforehand on the electrode peripheral edge portion before forming the resin material portion. This preliminary insulating layer serves as a base that remains exposed at the outer periphery after resin shrinkage, ensuring continuous protection of the electrode even when the resin shrinks during manufacturing processes.
Solution Approach 2:
The insulating structure is divided into two distinct layers: a first insulating layer (such as silicon oxide or silicon nitride) formed directly on the electrode, and a second insulating layer made of resin material formed over the first layer. This segmentation allows each layer to serve specific functions - the first layer provides stable adhesion and initial protection, while the second layer provides additional insulation and is designed to shrink without exposing the electrode.
2Reliability
If the resin material portion is made large enough to cover the first insulating layer completely, then better insulation is achieved, but the shrinkage effect on surrounding structures increases
Solution Approach 1:
The insulating structure is designed with different properties at different locations. The first insulating layer is positioned at the critical peripheral edge region where it must remain after shrinkage to protect the electrode, while the resin material portion extends outward but is designed to shrink. This local differentiation ensures that the most critical area (electrode periphery) maintains its insulating coverage while allowing the outer resin portion to shrink without causing harm.
3Reliability
If the resin material is heated to cure or process it, then the material properties are improved, but the shrinkage occurs which may expose the first insulating layer
Solution Approach 1:
The first insulating layer is formed in advance before the resin material is applied and heated. This preliminary formation ensures that even when the resin shrinks during heating and curing processes, the first insulating layer remains exposed at the outer periphery to maintain the insulating boundary and prevent electrode exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration and manufacturing method effectively suppress the influence of resin material shrinkage, ensuring the first insulating layer remains covered and preventing exposure, thus enhancing the reliability and stability of the semiconductor device.
Implementation Method 1
When a portion made of a resin material such as polyimide is formed, the resin material portion shrinks.
Data Source
AI summary
A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.