Semiconductor Insulation Layer Thickness Optimization

Solution Overview

Problem

The manufacturing processes of non-volatile memory devices are complex due to the need for different types of transistors with varying voltage requirements, leading to reliability issues and increased complexity.

Innovation Solution

A semiconductor device design with simplified manufacturing processes, featuring a substrate with distinct cell and peripheral regions, using layered insulation materials like silicon nitride, silicon oxide, and high-k dielectric materials, and conductive gate patterns aligned with specific insulation layers to manage high and low voltage regions efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If different types of transistors with varying voltage requirements are used in one device, then different functions can be performed, but manufacturing processes become complex

Engineering Contradiction:

Improvefunctional versatilityVSAvoidmanufacturing complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by forming insulation layers with different thicknesses in different regions of the semiconductor device. Specifically, a first insulation layer is formed with a first thickness in a first region and with a second thickness greater than the first thickness in a second region. This allows each region to be optimized for its specific voltage requirements while using a unified manufacturing process, thereby achieving functional versatility without increasing manufacturing complexity.

Inventive Principle:

Principle #3Local quality

2Reliability

If a thick gate insulation layer is formed for high voltage transistors, then reliability is improved, but manufacturing complexity increases due to different thickness requirements

Engineering Contradiction:

Improvegate insulation reliabilityVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the gate insulation structure into multiple regions with different thicknesses. A first insulation layer is formed with a first thickness in a first region and with a second thickness greater than the first thickness in a second region. This segmentation allows each region to have the appropriate insulation thickness for its voltage requirements, improving reliability while maintaining manufacturing simplicity through a single continuous process.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by forming insulation layers with different thicknesses in different regions of the semiconductor device. Specifically, a first insulation layer is formed with a first thickness in a first region and with a second thickness greater than the first thickness in a second region. This allows each region to be optimized for its specific voltage requirements while using a unified manufacturing process, thereby achieving functional versatility without increasing manufacturing complexity.

Inventive Principle:

Principle #3Local quality

3Reliability

If multiple insulation layers with different materials and thicknesses are used, then voltage requirements are met, but manufacturing steps increase

Engineering Contradiction:

Improvevoltage handling capabilityVSAvoidmanufacturing efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent merges the formation of multiple insulation layers into a single continuous manufacturing process. The first insulation layer is formed with different thicknesses in different regions without requiring separate deposition steps for each thickness variation. This combining of operations maintains the necessary voltage handling capability while improving manufacturing efficiency by reducing the number of discrete process steps.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS7799645B2Semiconductor device and method of manufacturing the same

Publication Date: 2010.09.21 SAMSUNG ELECTRONICS CO LTD

AI summary

An embodiment of a semiconductor device includes a substrate including a cell region and a peripheral region; a cell gate pattern on the cell region; and a peripheral gate pattern on the peripheral region, wherein a first cell insulation layer, a second cell insulation layer, and a third cell insulation layer may be between the substrate and the cell gate pattern, a first peripheral insulation layer, a second peripheral insulation layer, and a third peripheral insulation layer may be between the substrate and the peripheral gate pattern, and the second cell insulation layer and the third cell insulation layer include the same material as the respective second peripheral insulation layer and third peripheral insulation layer.