Multilayer Ceramic Component Semiconductor Interface Gas Penetration
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Solution Overview
Problem
Conventional multilayer ceramic electronic components face reliability issues due to weak adhesion between the ceramic sintered body and plating layers, leading to penetration of gases such as exhaust gases and lubricating oil gases, which reduces their reliability, especially in harsh environments like vehicle engine compartments.
Innovation Solution
A multilayer ceramic electronic component design that includes a stacked body with external electrodes featuring a conductive metal and glass underlying electrode layers, covered by plating layers, and semiconductor layers at the interface between the stacked body and external electrodes, which enhances adhesion and prevents gas penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional multilayer ceramic electronic component uses a ceramic sintered body with plating layers (Ni and Sn) without a semiconductor layer, then the manufacturing process is simple, but the adhesion strength between the ceramic sintered body and plating layers is weak, allowing gas penetration and reducing reliability in harsh environments
Solution Approach 1:
A semiconductor layer is introduced as an intermediary between the ceramic sintered body and the plating layers. This semiconductor layer acts as a mediator that significantly enhances the adhesion strength between the ceramic substrate and the external electrodes, preventing gas penetration through the interface and improving reliability in harsh environments without fundamentally changing the overall device structure
Solution Approach 2:
The external electrode structure is transformed from a simple plating layer into a composite structure consisting of a semiconductor layer combined with plating layers (Ni and Sn). This composite material approach leverages the adhesive properties of the semiconductor layer and the protective/conductive properties of the plating layers to achieve both strong bonding and electrical functionality
2Reliability
If the ceramic sintered body is directly bonded to plating layers, then the device structure is simple, but gases such as exhaust gas and lubricating oil gas can penetrate through the weak adhesion portion, reducing reliability in high-temperature environments
Solution Approach 1:
The semiconductor layer serves as a protective intermediary that blocks gas penetration pathways between the ceramic sintered body and the external environment. By positioning this layer at the critical interface, it prevents harmful gases (exhaust gas, lubricating oil gas) from penetrating through weak adhesion portions, thereby enhancing resistance to gas penetration in high-temperature environments
Solution Approach 2:
The semiconductor layer is selectively applied at the critical interface region between the ceramic sintered body and the plating layers, where adhesion strength is most needed. This localized application provides enhanced protection and bonding exactly where gas penetration is most likely to occur, without unnecessarily complicating other parts of the device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly reduces or prevents gas penetration, thereby improving the reliability and durability of the multilayer ceramic electronic components in harsh environments.
Implementation Method 1
The first underlying electrode layer is provided on the stacked body and includes a conductive metal and a glass component... significantly reduces or prevents the penetration of gasses generated from, for example, lubricating oil, through the interface between the stacked body and the external electrodes
Data Source
AI summary
A multilayer ceramic electronic component includes a rectangular parallelepiped stacked body having first and second main surfaces and first and second end surfaces, and first and second external electrodes. The first external electrode is provided on a portion of the second main surface and on the first end surface, and the second external electrode is provided on a portion of the second main surface and on the second end surface. A semiconductor layer is provided at the interface between the stacked body and a portion of the first external electrode that is located on the portion of the second main surface, and a semiconductor layer is provided at the interface between the stacked body and a portion of the second external electrode that is located on the portion of the second main surface.