Semiconductor I/O Latching for Burst Length Adaptation
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Solution Overview
Problem
Semiconductor devices face challenges in efficiently receiving and outputting data according to varying burst lengths, particularly when transitioning between different burst lengths such as eight and sixteen bits, which affects data synchronization and processing efficiency.
Innovation Solution
A semiconductor system comprising a first and second semiconductor device, where the first device outputs a command, address, and burst length information signal, and the second device latches and aligns data groups on separate I/O lines to generate output data, allowing for sequential or simultaneous data processing based on the burst length setting, utilizing data processing and alignment circuits to manage data transmission effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the semiconductor device uses a single I/O line for data transmission, then the device complexity is reduced, but the data transmission speed and processing efficiency deteriorate
Solution Approach 1:
The patent divides the data transmission system into multiple I/O lines (first group of I/O lines and second group of I/O lines) to transmit different groups of data simultaneously. This segmentation allows parallel data transmission, increasing the overall data throughput without requiring a single complex high-speed interface, thus resolving the contradiction between transmission speed and device complexity.
2Device complexity
If the semiconductor device sequentially latches data groups, then the circuit complexity is reduced, but the data processing time increases
Solution Approach 1:
The patent implements a dynamic latching mechanism that can operate in two modes: sequential latching for the first and second groups of data, or simultaneous latching of both data groups. The system dynamically selects the appropriate mode based on the burst length signal, allowing flexible optimization between circuit complexity and processing time depending on the specific operational requirements.
3Adaptability or versatility
If the semiconductor device supports multiple burst lengths, then the adaptability improves, but the data synchronization difficulty increases
Solution Approach 1:
The patent employs a burst length detection mechanism that receives a burst length signal and uses this feedback to dynamically configure the data latching and alignment operations. The system detects whether a short burst length (BL8) or long burst length (BL16) is required and adjusts its operation accordingly, maintaining proper data synchronization across different burst lengths without requiring complex manual configuration.
4Productivity
If the semiconductor device uses separate I/O lines for different data groups, then the data transmission efficiency improves, but the device complexity increases
Solution Approach 1:
The patent designs the I/O lines and latching circuits to serve multiple functions: they can transmit different groups of data (first group or second group) depending on the burst length, and the same alignment circuit handles both short and long burst length scenarios. This multi-functionality allows the system to achieve high data transmission efficiency through parallel I/O lines without proportionally increasing device complexity, as the same hardware resources are flexibly allocated based on operational needs.
Data Source
AI summary
A semiconductor system includes a semiconductor device. The semiconductor device outputs a first group of data and a second group of data to a first group of input/output (I/O) lines and a second group of I/O lines in response to a command and an address. The second semiconductor device sequentially latches the first group of data loaded on the first group of I/O lines and the second group of data loaded on the second group of I/O lines to generate an output data or simultaneously latches the first and second groups of data loaded on the first and second groups of I/O lines to generate the output data, in response to a burst length information signal.