Semiconductor Ion Injection via Gap Filling Layers
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Solution Overview
Problem
The manufacturing of semiconductor devices with 3D memory cell arrays faces challenges in forming deep holes and trenches, leading to foreign substances being left on the ion injection target layer, which causes defective junctions and reduces the yield and reliability of the semiconductor device.
Innovation Solution
A method involving the formation of gap filling layers with a smaller height than the holes, followed by the creation of ion injection mask patterns using a photoresist layer, which allows for the exposure of the ion injection target layer and prevents foreign substances from being left, thereby improving the ion injection process reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If deep holes are formed to expose ion injection target layer in 3D structure, then memory cell array area is reduced and data storage capacity is increased, but foreign substances are left on the ion injection target layer causing defective junctions
Solution Approach 1:
The patent applies preliminary action by forming a protective film on the ion injection target layer before the ion injection process. This protective film is formed in advance to prevent foreign substances from being left on the target layer during subsequent manufacturing steps, thereby resolving the contradiction between forming deep holes for 3D structure and maintaining junction quality.
Solution Approach 2:
The protective film acts as an intermediary layer between the ion injection target layer and the environment where foreign substances may be generated. This intermediary layer prevents direct contact between foreign substances and the target layer, thus preventing defective junctions while allowing the deep hole structure to be formed for increased storage capacity.
2Ease of manufacture
If ion injection mask pattern is formed in deep hole, then ion injection process can be performed, but foreign substances are generated and left on ion injection target layer
Solution Approach 1:
The protective film is formed preliminarily before the ion injection mask pattern is created. This preliminary formation of the protective film ensures that even when mask patterns are formed in deep holes, foreign substances generated during the process will not contaminate the ion injection target layer, thus maintaining manufacturing precision while enabling the ion injection process.
Solution Approach 2:
The protective film serves as an intermediary barrier that allows the ion injection mask pattern to be formed in deep holes without causing foreign substance contamination. The mediator layer protects the underlying target layer from contaminants generated during mask formation, resolving the contradiction between ease of manufacture and manufacturing precision.
3Productivity
If 3D structure is adopted to increase data storage capacity, then memory cell array area is reduced, but it becomes difficult to form hole or trench having large depth
Solution Approach 1:
The protective film is formed preliminarily on the ion injection target layer before attempting to form deep holes or trenches in the 3D structure. This preliminary protection enables the manufacturing process to proceed with deep hole formation while preventing contamination, thus making the 3D structure more manufacturable while maintaining high data storage capacity.
Solution Approach 2:
The protective film acts as an intermediary that facilitates the formation of deep holes and trenches in 3D structures. By providing a protective barrier, it reduces the difficulty of manufacturing deep structures, as the risk of foreign substance contamination is minimized, thereby enabling the adoption of 3D structures for increased productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses the generation of defective junctions, enhances the reliability of the ion injection process, and improves the yield and reliability of the semiconductor device by preventing foreign substances from contaminating the ion injection target layer.
Implementation Method 1
exposing the gap filling layer by removing the photoresist layer formed on the gap filling layer in the photoresist layer
Implementation Method 2
performing an ion injection process on the exposed ion injection target layer
Data Source
AI summary
Disclosed is a method for manufacturing a semiconductor device, including: forming a first material layer including holes exposing a part of an ion injection target layer on the ion injection target layer; forming gap filling layers having a smaller height than that of the holes inside the holes; forming a second material layer on the gap filling layers and the first material layer; forming ion injection mask patterns exposing the gap filling layer by removing the second material layer formed on the gap filling layer in the second material layer; exposing a part of the ion injection target layer through inner portions of the holes by removing the exposed gap filling layer; and performing an ion injection process on the exposed ion injection target layer.