Semiconductor Isolation Liner Structure to Prevent Gate Shorts
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is the occurrence of defects such as short-circuiting between fine patterns, which affects the reliability and performance of semiconductor devices due to the complexity in forming precise patterns.
Innovation Solution
The semiconductor device design includes a substrate with active patterns, isolation layers, and a protection layer positioned on the isolation layers, where the isolation layers have varying widths and depths, and the protection layer is formed to cover the recesses in these layers, preventing exposure of the side surfaces and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If isolation layers with varying widths and depths are formed between active patterns, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The isolation structure is segmented into multiple isolation layers with different widths and depths, allowing precise control over the isolation regions between active patterns. This segmentation enables tailored isolation for different areas, improving manufacturing precision while managing complexity through modular design
Solution Approach 2:
Different isolation layers are designed with specific width and depth characteristics suited to their local requirements between active patterns. This local quality approach allows optimization of isolation precision in critical areas without uniformly increasing complexity across the entire device structure
2Reliability
If a protection layer is formed on the isolation layer, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The protection layer is formed on the isolation layer before subsequent processing steps, providing preliminary protection that prevents exposure of side surfaces and reduces leakage current. This preliminary action ensures reliability is established early in the manufacturing process
Solution Approach 2:
The protection layer acts as an intermediary between the isolation layer and subsequent structures, preventing direct exposure and reducing harmful leakage effects. This intermediary layer simplifies the overall structure by providing a single protective solution rather than requiring multiple protective measures
3Object-generated harmful factors
If the protection layer covers the recesses in isolation layers, then leakage current is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The protection layer is designed to extend over the recesses in the isolation layers, providing beforehand cushioning that prevents leakage current paths. This design approach anticipates potential leakage issues and provides preventive coverage, reducing the need for extremely precise alignment during manufacturing
Data Source
AI summary
A semiconductor device including a substrate; active patterns positioned on the substrate; a first isolation layer and a second isolation layer positioned between the active patterns; a first protection liner positioned on the first isolation layer; a second protection liner positioned on the second isolation layer; channel patterns positioned on the active patterns: source/drain patterns positioned on both sides of the channel patterns; and a first gate electrode positioned above the first protection liner and the second protection liner, and surrounding the channel patterns, wherein the first isolation layer has a first width, the second isolation layer has a second width wider than the first width, and a first height from the substrate to the first protection liner is greater than a second height from the substrate to the second protection liner.