Semiconductor Isolation Structure for Short-Channel Suppression
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Solution Overview
Problem
Existing semiconductor devices face challenges in scaling and performance due to issues like short channel effects and punch-through, particularly when using bulk silicon substrates without silicon-on-insulator (SOI) technology.
Innovation Solution
The semiconductor device incorporates a substrate with distinct regions, featuring a laminate structure with alternately stacked sacrificial and active layers. Isolation insulating layers of different materials and heights are formed on each region, allowing for the creation of gate electrodes that surround active patterns, thereby applying stress to improve carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If bulk silicon substrates are used without SOI technology, then device fabrication is simpler, but short channel effects and punch-through occur
Solution Approach 1:
The substrate is divided into multiple regions with different isolation insulating layer heights. The first region has a first isolation insulating layer, while the second region has a second isolation insulating layer with greater height. This segmentation allows different areas to have optimized isolation characteristics, suppressing short channel effects in critical regions while maintaining fabrication feasibility.
Solution Approach 2:
The patent introduces vertical dimension variation by creating isolation insulating layers of different heights in different regions. The second isolation insulating layer extends higher than the first, creating a three-dimensional isolation structure that effectively suppresses punch-through and short channel effects without requiring full SOI substrate technology.
2Reliability
If isolation insulating layers of different heights are formed, then short channel effects are suppressed, but device structure becomes more complex
Solution Approach 1:
Different regions of the device are assigned different isolation insulating layer heights based on their specific requirements. The first region uses a first isolation insulating layer height, while the second region uses a taller second isolation insulating layer. This local differentiation optimizes performance in critical areas without unnecessarily complicating the entire device structure.
3Reliability
If gate electrodes surround active patterns, then carrier mobility is improved through stress, but manufacturing precision requirements increase
Solution Approach 1:
The gate electrode is designed to surround the active pattern in a nested configuration, with the gate electrode forming a ring-like structure around the active region. This nested arrangement applies stress uniformly to the active pattern, improving carrier mobility while providing clear fabrication guidelines that reduce alignment precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses short channel effects and punch-through, enhances carrier mobility, and improves the overall performance of the semiconductor device without the need for SOI substrates.
Implementation Method 1
allowing for the creation of gate electrodes that surround active patterns, thereby applying stress to improve carrier mobility
Data Source
AI summary
A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.