Semiconductor Isolation Structure With Hollow Stress-Relief Region
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Solution Overview
Problem
The reliability of semiconductor devices is compromised due to the positioning of hollow parts, which can lead to reduced mechanical strength and stress-related issues caused by thermal expansion coefficient differences between conductive members and the semiconductor material.
Innovation Solution
The semiconductor device incorporates a specific arrangement of solid and hollow parts within isolation structures, where the hollow parts are positioned between the front and back surfaces of the semiconductor layer, with their centers located in the front-side region to minimize stress while maintaining mechanical strength, and the solid material is strategically placed between the conductive member and the semiconductor layer to provide insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hollow parts are provided in isolation structures to reduce stress influences, then stress resistance is improved, but mechanical strength is reduced
Solution Approach 1:
The patent applies local quality by providing hollow parts only in specific regions of the isolation structure where stress relief is most needed, rather than uniformly throughout. The hollow parts are positioned at predetermined locations that correspond to regions experiencing higher thermal stress, allowing stress reduction where critical while maintaining solid material in areas requiring mechanical strength.
Solution Approach 2:
The isolation structure employs a composite design combining solid insulating material and hollow voids in a strategically arranged configuration. This composite structure leverages the insulating properties of the solid material while utilizing the hollow regions for stress relief, achieving both electrical isolation and mechanical stress management simultaneously.
2Reliability
If hollow parts are positioned to reduce stress, then stress-related mechanical damages are reduced, but structural integrity may be compromised
Solution Approach 1:
The hollow parts are pre-positioned in the isolation structure at locations predicted to experience maximum thermal stress during device operation. This preliminary placement of stress-relief features before device assembly and operation prevents stress concentration and potential mechanical damage from occurring in the first place.
Solution Approach 2:
The hollow parts act as intermediary elements within the isolation structure, serving as buffer zones that absorb and distribute thermal stress. These voids mediate between the conductive members and surrounding structures, preventing direct stress transmission that could lead to mechanical damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This arrangement enhances the reliability of the semiconductor device by reducing stress-related mechanical damages and maintaining the structural integrity of the isolation structures, thereby improving the device's performance and image quality in applications like image capturing.
Implementation Method 1
by providing a hollow part in each of an isolation structure between semiconductor elements and an isolation structure between a semiconductor and a conductor, an effect of reducing influences of stress generated around the isolation structure is expected
Implementation Method 2
a solid material that is an insulator is provided between the conductive member and the semiconductor layer
Data Source
AI summary
A semiconductor device includes a semiconductor layer having a front surface on which a transistor is provided and a back surface opposite to the front surface, and a conductive member that penetrates through the semiconductor layer. In the semiconductor device, between a second plane including the back surface and a third plane, a solid material that is an insulator is provided between the conductive member and the semiconductor layer, and, between a first plane including the front surface and the third plane, a hollow part is provided between the conductive member and the semiconductor layer, and a center of the hollow part in a direction crossing the first plane and the second plane is positioned between the first plane and the third plane.