Semiconductor Laser Cleavage via Preliminary Laser Scribing
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Solution Overview
Problem
Conventional semiconductor laser element manufacturing methods are cumbersome and low in productivity due to the need for secondary scribing, which affects the precision of cleavage surfaces.
Innovation Solution
A method involving the formation of modified starting point regions using laser light to cut semiconductor laser elements, allowing for precise cleavage without the need for secondary scribing, thereby improving productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If secondary scribing is performed on each bar after cleaving, then cutting precision is maintained, but manufacturing complexity and time increase significantly
Solution Approach 1:
The patent applies preliminary action by forming starting point regions for both first and second cutting lines before any cleaving operation. Specifically, the object is irradiated with laser light to form modified regions along both the first line to cut (orthogonal to stripe direction) and the second line to cut (along stripe direction) before cleaving. This preliminary formation of all necessary starting points eliminates the need for secondary scribing on each individual bar, reducing manufacturing complexity while maintaining precision.
2Manufacturing precision
If secondary scribing is performed on each bar, then precise cutting is achieved, but productivity decreases due to cumulative operation time
Solution Approach 1:
The patent performs preliminary action by forming all necessary starting point regions (both first and second cutting lines) in the entire object before cleaving into bars. The laser irradiation creates modified regions along both cutting lines in advance, so that after cleaving, each bar already possesses the second starting point region needed for precise cutting. This eliminates repetitive secondary scribing operations on each bar, significantly improving productivity while maintaining cutting precision.
Solution Approach 2:
The patent merges the formation of starting point regions for both cutting directions into a single preliminary operation performed on the entire object before cleaving. Instead of separately forming first starting points during initial cleaving and then forming second starting points on each bar afterward, the method combines both starting point formations into one unified preliminary process using laser irradiation along both the first and second cutting lines.
3Manufacturing precision
If multiple scribing operations are performed sequentially, then cutting accuracy is maintained, but manufacturing time increases
Solution Approach 1:
The patent applies preliminary action by forming starting point regions for both the first cutting line (orthogonal to stripe direction) and the second cutting line (along stripe direction) before any cleaving operation. The object is irradiated with laser light to create modified regions along both lines in advance. This preliminary dual-line starting point formation eliminates the need for sequential secondary scribing operations on each bar, reducing manufacturing cycle time while maintaining line cut precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the productivity of semiconductor laser elements by ensuring precise cleavage surfaces and reducing the complexity of the manufacturing process.
Implementation Method 1
irradiating the object with laser light while locating a converging point within the object, so as to form a second starting point region for cutting having a modified region along the stripe direction between the semiconductor laser parts
Data Source
AI summary
Starting point regions for cutting 8a, 8b extending along lines to cut 5a, 5b are initially formed in an object to be processed 1. The starting point regions for cutting 8b have modified regions 7b formed by irradiating the object 1 with laser light while locating a converging point within the object 1 and are formed in parts extending along the lines to cut 5b excluding portions 34b intersecting the lines to cut 5a. This makes the starting point regions for cutting 8b much less influential when cutting the object 1 from the starting point regions for cutting 8a acting as a start point, whereby bars with precise cleavage surfaces can reliably be obtained. Therefore, it is unnecessary to form a starting point region for cutting along the lines to cut 5b in each of a plurality of bars, whereby the productivity of semiconductor laser elements can be improved.