Oxygen plasma pre-treatment prevents colored layer formation at oxide laser interfaces, ensuring optical transparency and low thermal resistance.
A wavelength conversion member uses easily sinterable ceramic particles to bind inorganic phosphors and conduct heat away from the active layer.
A spot-size converter uses high-index elements to enable evanescent coupling between dissimilar waveguides.
A wavelength conversion member uses a porous oxide matrix to conduct heat away from phosphor particles.
A self-aligning semiconductor laser assembly integrates a heat exchanger and carrier to position optical components during packaging.
An inclined cap opening minimizes return light reflection onto the semiconductor element, increasing light emission intensity and extending lifespan.
A flex bearing mediates piezoelectric motion to define a precise pivot axis, eliminating mode hops and enabling stable wavelength tuning in vacuum environments.
Preliminary laser scribing creates internal modified regions along cutting lines, eliminating secondary scribing steps and boosting manufacturing productivity.
A stacked waveguide optical coupler uses evanescent coupling between adjacent layers to adapt light fields.
Segmented fabrication lines produce monolithic silicon structures combining waveguides and CMOS components.
A housing cover production method uses eutectic solder metallization to join glass components at low temperatures.
Fluid coolant flow channels in laser diode pump modules reduce system weight and power consumption while maintaining steady-state temperature.
A multi-segment focusing lens concentrates pulsed laser energy into multiple focal points within semiconductor wafers.
Epitaxial growth of {110} sidewalls on patterned substrates creates vertical mirror facets.
Threaded compression secures a laser diode in a heat sink mount, eliminating toxic adhesives and improving thermal conduction.
A diffusing member refracts laser light to enlarge the beam diameter and apparent source size.
An open region exposes the first DBR for substrate-side emission, enabling operation at 850 nm and 1550 nm while reducing substrate resistance in the circuit.