Semiconductor Device Surge Resistance via Layer Width Control
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Solution Overview
Problem
Semiconductor devices with rectifying functions, such as diodes, face challenges in improving resistance against surge voltage and surge current, particularly in preventing breakdown that could lead to device destruction.
Innovation Solution
The semiconductor device is designed with specific layer configurations, including a PIN diode structure in both the element and termination regions, where the width of certain semiconductor layers is carefully controlled to manage impurity concentration and conductivity, preventing forward and reverse breakdowns, thereby enhancing resistance to surge voltage and current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional diode structure with n-type and p-type semiconductor regions is used, then the device can perform rectification function, but the resistance against surge voltage and surge current is insufficient
Solution Approach 1:
The semiconductor device is divided into element region and termination region, with each region having specific layer structures optimized for its function. The element region contains the rectifying junction while the termination region provides surge protection through carefully designed layer widths and impurity concentrations.
Solution Approach 2:
Different regions of the semiconductor device have different structural characteristics. The termination region has a sixth semiconductor layer with larger width than the fourth semiconductor layer in the element region, creating local variations in impurity concentration and conductivity to prevent breakdown while maintaining rectification performance.
2Reliability
If the semiconductor layers are designed to prevent breakdown, then resistance to surge voltage improves, but the device complexity increases due to multiple layers with different width requirements
Solution Approach 1:
The sixth semiconductor layer serves multiple functions: it provides surge protection by preventing reverse breakdown in the termination region, maintains electrical continuity, and works in conjunction with the fourth semiconductor layer to enable conductivity modulation. This multi-functionality reduces the need for additional separate protective structures.
Solution Approach 2:
The invention controls the width parameter of semiconductor layers, specifically making the width of the sixth semiconductor layer larger than that of the fourth semiconductor layer. This parameter change optimizes the balance between breakdown prevention and device performance without requiring fundamentally new structural concepts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively improves the semiconductor device's resistance to surge voltage and current, preventing breakdown and potential device destruction, while allowing for conductivity modulation to enhance performance.
Implementation Method 1
allowing for conductivity modulation to enhance performance
Data Source
AI summary
A semiconductor device is provided having a first region and a second region surrounding the first region includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type between the first electrode and the second electrode, a second semiconductor layer of the first conductivity type located over the first semiconductor layer, a third semiconductor layer of the second conductivity type on the second semiconductor layer in the first region, a fourth semiconductor layer of the first conductivity type between the third semiconductor layer and the second semiconductor layer, a fifth semiconductor layer of the second conductivity type on the second semiconductor layer in the second region, and a sixth semiconductor layer of the first conductivity type located between the fifth semiconductor layer and the second semiconductor layer, wherein the width of the fourth semiconductor layer is less than the width of the sixth semiconductor layer.