Semiconductor Device Internal-Potential Force Circuit for Leak Current Prevention

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Solution Overview

Problem

The existing wafer test systems for semiconductor devices require multiple relays to prevent leak currents, which increases the complexity and cost of the probe card, making it impractical for large-scale testing of semiconductor devices.

Innovation Solution

A semiconductor device with an internal-potential force circuit that includes a switch element, which disconnects the first node from the second external terminal when a test signal is activated, eliminating the need for second relays and reducing the number of relays required on the probe card.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If second relays are provided between each second pin and the second power supply terminal to prevent leak currents, then the reference potential can be supplied reliably, but the probe card complexity and cost increase significantly

Engineering Contradiction:
Improvereference potential supply reliabilityVSAvoidprobe card complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention extracts the leak current prevention function from the probe card's second relays and relocates it to the semiconductor device's internal-potential force circuit. This removes the need for second relays in the probe card, reducing its complexity while maintaining reliable reference potential supply through the switch element that disconnects the first node from the second external terminal when test signal is activated.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The semiconductor device performs self-service by using its own internal-potential force circuit to prevent leak currents that would otherwise require external relay control. The switch element within the device automatically disconnects the first node based on the test signal activation, making the device self-sufficient in preventing the harmful leak current effect.

Inventive Principle:
Principle #25Self-service

2Object-generated harmful factors

If multiple relays are used to control power supply to each semiconductor device, then current leakage can be prevented, but the testing cost and system complexity increase

Engineering Contradiction:
Improveleak current preventionVSAvoidsystem complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The leak current prevention function is extracted from the external relay system and embedded within the semiconductor device itself through the internal-potential force circuit. This eliminates the need for complex relay control systems while effectively preventing leak currents through the switch element's automatic disconnection of the first node.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The switch element acts as an intermediary within the semiconductor device that mediates between the first node and the second external terminal. It automatically disconnects the first node when the test signal is activated, serving as an internal mediator that prevents leak currents without requiring external relay intervention.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Stability of the object's composition

If the reference potential generation circuit remains connected to the second external terminal during testing, then the circuit remains functional, but leak currents occur when power supply is interrupted

Engineering Contradiction:
Improvereference potential generation circuit stabilityVSAvoidleak current
Core Design Contradiction:
Stability of the object's compositionVSObject-generated harmful factors

Solution Approach 1:

The internal-potential force circuit applies preliminary anti-action by proactively disconnecting the first node from the second external terminal through the switch element when the test signal is activated. This preemptive disconnection prevents the harmful leak current from occurring in the first place, rather than attempting to correct it after it occurs.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The connection state of the first node is made dynamic through the switch element, which can transition between connected and disconnected states based on test signal activation. This dynamic control allows the reference potential generation circuit to maintain stability when needed while preventing leak currents when power supply is interrupted, adapting its connection state to operational requirements.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9618562B2Semiconductor device
Publication Date: 2017.04.11 MICRON TECHNOLOGY INC
  • US9618562B2 patent drawing
  • US9618562B2 patent drawing
  • US9618562B2 patent drawing

AI summary

Disclosed herein is an apparatus that includes a first internal-potential generation circuit that generates a first internal potential from a power supply potential and that outputs the first internal potential to a first node, and an internal-potential force circuit that includes a first switch element provided between the first node and a second external terminal. The internal-potential force circuit causes the first switch element to enter into an off-state when the test signal supplied to a third external terminal is activated and a potential level of a first external terminal is a first level, and causes the first switch element to enter into an on-state when the test signal supplied to the third external terminal is activated and the potential level of the first external terminal is a second level different from the first level.