Semiconductor Failure Detection via Leakage Current Measurement
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Solution Overview
Problem
The existing methods for detecting semiconductor device failures, such as electrical die sorting, often result in extended feedback times during product development, which can delay the detection of failures in semiconductor chips.
Innovation Solution
A method involving the formation of active fins and gate structures on a substrate, followed by the creation of source/drain layers and wirings, allowing for the detection of leakage current by applying a voltage, which efficiently identifies device failures early in the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrical die sorting is used to detect semiconductor chip failures, then failure detection is achieved, but feedback time is extended
Solution Approach 1:
The patent applies preliminary action by forming test element groups (TEGs) with active fins, gate structures, source/drain layers, and wirings during the semiconductor fabrication process itself, before the chips are completed. This allows failure detection to be performed earlier in the manufacturing sequence, reducing the feedback time between fabrication and testing while maintaining reliable failure detection capability.
2Reliability
If multiple active fins are formed on each active region, then device functionality is improved, but leakage current measurement becomes less effective for failure detection
Solution Approach 1:
The patent applies local quality by creating test element groups with different configurations - specifically, some active regions contain only one or two active fins while other active regions contain multiple active fins. This local differentiation allows the TEG to measure leakage current effectively in regions with fewer fins, while the overall device maintains full functionality through regions with multiple fins. The selective configuration optimizes both measurement precision and device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables early detection of semiconductor device failures, reducing feedback times and facilitating timely adjustments in the fabrication process, thereby improving the efficiency and reliability of semiconductor chip production.
Implementation Method 1
detecting a leakage current between the second source/drain layers by applying a voltage to the second wiring
Data Source
AI summary
A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.