Semiconductor Light Emitting Device ESD Protection Integration
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Solution Overview
Problem
Conventional semiconductor light emitting devices lack effective electrostatic discharge (ESD) immunity, which can lead to electrical reliability issues and damage from sudden voltage fluctuations.
Innovation Solution
A semiconductor light emitting device is designed with an integrated electrostatic protection unit sharing the same semiconductor layer structure as the light emitting unit, featuring a reflective metal second electrode layer, insulating layers, and wiring connections to enhance ESD immunity, including a conductive supporting member and contact layers for improved electrical connectivity and protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor light emitting devices are used, then the device structure is simple, but the electrostatic discharge (ESD) immunity is insufficient
Solution Approach 1:
The patent merges the light emitting unit and the electrostatic protection unit into a single integrated device structure. Both units share common elements including the substrate, semiconductor layers (n-type GaN, AlGaN barrier layers, p-type GaN), and electrode layers (Al electrode, Au electrode). This integration provides ESD protection functionality without requiring a completely separate protection device, thereby improving reliability while controlling structural complexity.
2Reliability
If the light emitting unit and electrostatic protection unit are integrated, then ESD immunity is enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The integrated device is segmented into distinct functional regions: the light emitting unit with its active layers for light generation, and the electrostatic protection unit with its protective layers. The structure is divided into specific layers including n-type GaN layers, AlGaN barrier layers, p-type GaN layers, and contact layers, each with defined doping concentrations and thicknesses. This segmentation allows for systematic manufacturing while maintaining ESD protection functionality.
Solution Approach 2:
The semiconductor layers serve multiple functions: the n-type and p-type GaN layers and AlGaN barrier layers contribute to both light emission in the light emitting unit and electrostatic protection in the protection unit. The shared electrode layers (Al and Au) provide electrical connectivity for both functions. This multi-functionality simplifies the manufacturing process by using the same material system and growth techniques for both units.
3Reliability
If electrostatic protection unit is added, then electrical reliability improves, but the device structure becomes more complex
Solution Approach 1:
The electrostatic protection unit is nested within the overall device structure, sharing the substrate and semiconductor layer system with the light emitting unit. The protection unit's active layers are positioned adjacent to and integrated with the light emitting layers, creating a compact nested arrangement that provides ESD protection without adding significant structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides strong ESD immunity, enhancing the electrical reliability of the semiconductor light emitting device by protecting it from electrostatic discharges of 5 KV or more, ensuring stable operation and preventing interlayer shorts.
Implementation Method 1
a second electrode layer including reflective metal
Data Source
AI summary
A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.