Semiconductor Light Emitting Device Electrode Configuration
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Solution Overview
Problem
The existing semiconductor light emitting devices face issues with non-uniform current spreading due to narrow current flow and reduced active layer area, leading to increased operation voltage and vulnerability to electrostatic discharge.
Innovation Solution
The semiconductor light emitting device features a configuration with first and second conductive semiconductor layers, stripe-shaped electrode branches, and insulating parts to maintain a uniform interval between electrodes, ensuring uniform current distribution and minimizing active layer loss through strategically placed electrode pads and conductive vias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If electrodes are arranged horizontally to narrow current flow, then operation voltage increases, but current efficiency degrades
Solution Approach 1:
The electrodes are divided into multiple fingers (first electrode fingers and second electrode fingers) that are interleaved with each other. This segmentation allows the current to flow through multiple parallel paths across the active layer, reducing the overall resistance and improving current efficiency while maintaining adequate voltage operation.
Solution Approach 2:
The electrode arrangement transitions from a simple horizontal layout to a multi-dimensional interleaved finger structure. The fingers extend in opposite directions from center lines and interlock vertically and horizontally, creating a three-dimensional current distribution pattern that improves efficiency without sacrificing voltage characteristics.
2Ease of manufacture
If active layer is etched to expose semiconductor layers for electrode formation, then electrode connection is enabled, but active layer area is reduced
Solution Approach 1:
The etching is performed selectively to create isolated contact holes only at specific locations where electrode fingers need to connect to the semiconductor layers. This segmented approach minimizes the total etched area while ensuring adequate electrical connection points, preserving more active layer area compared to comprehensive etching methods.
Solution Approach 2:
Different regions of the device have different treatments: the active layer is etched only in localized areas where electrode connections are required, while the majority of the active layer remains intact. This local quality approach ensures electrode connectivity is achieved without unnecessarily reducing the overall active layer area.
3Loss of energy
If electrodes are divided into pads and fingers for uniform current spreading, then current distribution improves, but uniform interval between electrodes cannot be secured
Solution Approach 1:
The first and second electrode fingers are designed with asymmetric positioning relative to their respective center lines, with different extension lengths in opposite directions. This asymmetric design allows the fingers to interleave in a pattern that maintains uniform intervals while achieving uniform current spreading across the active layer.
Solution Approach 2:
The electrode structure utilizes both horizontal and vertical dimensions to achieve uniform spacing. By arranging fingers to extend in opposite directions from center lines and interleaving them in a multi-dimensional pattern, the design maintains consistent intervals between adjacent fingers of opposite polarities while ensuring uniform current distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances current spreading and luminance by maintaining a uniform interval between electrodes, reducing the risk of electrostatic discharge and improving light extraction efficiency.
Implementation Method 1
A light emitting diode, a type of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors according to electron hole recombination in p and n type semiconductor junction parts when current is applied thereto
Data Source
Figure 1A
Figure 1B
Figure 2A
AI summary
A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.