Semiconductor Light Emitting Device with Convex Lens for Light Extraction
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Solution Overview
Problem
The existing semiconductor light emitting device with a chip size package structure faces challenges in improving optical characteristics, particularly on the fluorescer layer side, which affects light emission efficiency.
Innovation Solution
The device incorporates a semiconductor layer with a light emitting layer between two semiconductor layers, along with p-side and n-side electrodes, interconnects, and a fluorescer layer on the opposite surface, where the interconnects and reflective film enhance light extraction by increasing the light emitting surface area and reducing light leakage through a micro-uneven surface and light-transmissive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a chip size package structure with fluorescer layer is used, then the device compactness is improved, but the light extraction efficiency deteriorates
Solution Approach 1:
The patent applies curvature by forming a convex lens shape on the light-transmissive layer. This curved surface structure redirects light that would otherwise be trapped by total internal reflection, improving light extraction efficiency while maintaining the compact chip size package structure.
Solution Approach 2:
The patent introduces a vertical dimension solution by creating a three-dimensional convex lens structure on top of the planar chip. This adds optical functionality in the vertical direction without increasing the horizontal footprint, thus maintaining compactness while improving light extraction.
2Loss of energy
If the light emitting surface area is increased to improve light extraction, then the light extraction efficiency is improved, but the device area increases
Solution Approach 1:
The convex lens shape concentrates and redirects light in a controlled manner, effectively increasing the functional light-emitting surface area through optical manipulation rather than physical expansion. The curved surface area is greater than the base area, providing enhanced light extraction without proportionally increasing the device footprint.
3Reliability
If a micro-uneven surface structure is added to reduce light leakage, then the optical characteristics are improved, but the manufacturing complexity increases
Solution Approach 1:
The patent uses a regular convex lens shape rather than random micro-uneven structures. This geometrically defined curved surface can be manufactured using standard semiconductor processing techniques such as reflow processing or molding, avoiding the need for complex nanofabrication while still achieving improved light extraction and reduced light leakage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency, reduces color breakup, and improves the reliability of the semiconductor light emitting device by increasing the light emitting surface area and preventing light leakage, resulting in improved optical characteristics and reliability.
Implementation Method 1
a light-transmissive layer which contacts an upper surface, a side surface, and a corner of the optical layer... the first layer includes a first lower end portion contacting the side surface of the optical layer... and a second lower end portion separated from the optical layer
Implementation Method 2
a fluorescer layer and multiple fluorescers are provided on one surface side of a semiconductor layer including a light emitting layer
Data Source
AI summary
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.