Semiconductor Light Emitting Device Heat Dissipation via Metal Layer
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in heat dissipation, leading to decreased light emission uniformity and crystal degradation, especially when using wavelength conversion layers like phosphor, which can alter their characteristics due to temperature increases.
Innovation Solution
The semiconductor light emitting device incorporates a metal layer opposed to both the bottom and side surfaces of the stacked body, including a wavelength conversion layer, to enhance heat dissipation and improve light extraction efficiency by reflecting laterally emitted light back into the conversion layer, thereby maintaining uniformity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation is improved by adding metal layers and insulating sections, then temperature control and light emission uniformity are improved, but device structure and manufacturing complexity increase
Solution Approach 1:
The device is divided into functionally distinct segments: a stacked body containing semiconductor layers and light emitting layer, a wavelength conversion layer, a metal layer with first and second electrodes, and insulating sections. This segmentation allows each component to be optimized for its specific function while managing heat dissipation effectively.
Solution Approach 2:
Insulating sections are introduced as intermediary elements between the metal layer and stacked body, and between opposing metal layers. These intermediaries enable thermal management and electrical isolation without requiring direct contact between conductive components, thus controlling temperature while managing structural complexity.
2Temperature
If metal layer is positioned close to stacked body for heat dissipation, then temperature control improves, but electrical insulation becomes more difficult to maintain
Solution Approach 1:
Insulating sections made of insulating material are positioned between the metal layer and the stacked body, and between opposing metal layers. These intermediary insulating sections maintain electrical isolation while allowing the metal layer to be positioned close to the stacked body for effective heat dissipation.
Solution Approach 2:
The insulating sections serve multiple functions simultaneously: they provide electrical insulation between conductive components, maintain structural integrity, and facilitate thermal management by enabling close positioning of heat-dissipating metal layers without compromising electrical isolation.
3Illumination intensity
If wavelength conversion layer is used to convert light wavelength, then light emission characteristics are improved, but temperature increase alters layer characteristics and reduces reliability
Solution Approach 1:
The metal layer acts as a thermal intermediary that conducts heat away from the wavelength conversion layer, while insulating sections prevent direct thermal contact that would transfer excessive heat. This intermediary thermal management system maintains the wavelength conversion layer at stable temperatures, preserving its light emission characteristics and reliability.
Solution Approach 2:
The thermal conductivity parameters of the device structure are modified by introducing metal layers with high thermal conductivity and insulating sections with appropriate thermal resistance. This parameter change enables controlled heat flow that maintains the wavelength conversion layer at optimal operating temperatures, ensuring stable light emission characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively improves heat dissipation for both the crystal layer and the wavelength conversion layer, ensuring better light extraction efficiency and uniformity of color emission, while also reducing the risk of crystal degradation and manufacturing costs.
Implementation Method 1
a wavelength conversion layer configured to convert wavelength of light emitted from the first light emitting layer
Implementation Method 2
a first metal layer including: a first side surface portion opposed to at least part of the wavelength conversion layer
Implementation Method 3
improve light extraction efficiency by reflecting laterally emitted light back into the conversion layer
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.