Semiconductor Light Emitting Device Rectifying Element Integration
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Solution Overview
Problem
The integration of a rectifying element to protect semiconductor light emitting devices from reverse overvoltage increases the device size and reduces the light-emitting area, leading to decreased brightness.
Innovation Solution
A semiconductor light emitting device design that includes a light emitting unit, electrodes, metal pillars, and a rectifying element positioned below the light emitting unit without overlapping, allowing for protection from reverse overvoltage while maintaining a compact size and high brightness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a rectifying element is connected in parallel to protect the semiconductor light emitting device from reverse overvoltage, then the device reliability is improved, but the device size is increased
Solution Approach 1:
The rectifying element is integrated within the semiconductor light emitting device structure itself, merging the protection function into the existing device architecture. The rectifying element shares the same substrate and electrode structure, eliminating the need for separate external protection components and reducing overall device size.
Solution Approach 2:
The semiconductor structure serves multiple functions: the first and second semiconductor layers form both the light emitting junction and the rectifying junction. The same electrodes and interconnections serve both the light emitting unit and the rectifying element, allowing a single structure to provide both light emission and overvoltage protection.
2Volume of moving object
If a rectifying element is provided without changing the device size, then the device size is maintained, but the light-emitting area is reduced and light amount is decreased
Solution Approach 1:
The rectifying element is positioned in a specific location that does not interfere with the light emitting area. The first semiconductor layer has a first portion for light emission and a second portion for the rectifying element, allowing each region to be optimized for its specific function without compromising the other.
Solution Approach 2:
The rectifying element is arranged in a different spatial dimension or plane relative to the light emitting unit. When projected onto a plane, the rectifying element and light emitting unit are positioned such that they occupy different areas, allowing both to coexist without reducing the effective light-emitting area.
3Device complexity
If the rectifying element is integrated into the semiconductor structure, then the device complexity is reduced, but the manufacturing precision requirements are increased
Solution Approach 1:
The first and second semiconductor layers are formed with predetermined regions and conductive types during the epitaxial growth process. The rectifying element structure is prepared in advance with appropriate doping profiles and geometric configurations, allowing for precise control of electrical characteristics before final assembly and connection.
Data Source
AI summary
A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.