Semiconductor Light-Emitting Device Reflective Protection Structure
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Solution Overview
Problem
Existing semiconductor light-emitting devices face challenges in improving the reliability of electrodes for connecting semiconductor layers to external structures and enhancing light extraction efficiency.
Innovation Solution
A semiconductor light-emitting device is designed with a reflective protection structure that includes a metallic reflector film and insulating thin films, forming a multi-reflective layer to enhance light reflection and electrode reliability, featuring a structure with holes to expose the electrode surface and cover adjacent semiconductor regions, improving adhesion and light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a reflective protection structure is added to improve electrode reliability and light extraction efficiency, then device performance is improved, but device complexity increases
Solution Approach 1:
The reflective protection structure is formed as a composite of multiple insulating thin films with different refractive indices (first insulating thin film with higher refractive index, second insulating thin film with lower refractive index). This composite structure provides both protective functionality and light extraction enhancement through refractive index contrast, resolving the contradiction by integrating multiple functions into a unified composite structure rather than adding separate components.
Solution Approach 2:
The reflective protection structure serves multiple functions simultaneously: it protects the electrode layer from environmental damage, provides light reflection through its insulating film composition, and enhances light extraction efficiency through the refractive index difference between layers. By combining these functions into a single integrated structure, the patent avoids increasing device complexity while achieving improved reliability and optical performance.
2Loss of energy
If insulating thin films with different refractive indices are stacked to enhance light reflection, then light extraction efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes changes in the refractive index parameter by stacking insulating thin films with different refractive indices (first film with higher index, second film with lower index). This parameter variation creates optical contrast that enhances light reflection and extraction efficiency. The manufacturing process leverages standard thin film deposition techniques, controlling the refractive index parameter through material selection and deposition conditions rather than requiring complex additional processing steps.
Solution Approach 2:
The reflective protection structure employs a composite of multiple insulating thin films with deliberately different refractive indices. This composite material approach creates internal optical interfaces that reflect and redirect light, improving extraction efficiency. The manufacturing complexity is managed by using conventional thin film deposition processes that can precisely control layer thickness and material composition, making the composite structure feasible with existing fabrication capabilities.
3Reliability
If the reflective protection structure covers the semiconductor region adjacent to the electrode layer, then electrode reliability is improved, but active emission area is reduced
Solution Approach 1:
The reflective protection structure is applied locally to specific regions where protection is needed (adjacent to electrode layers and at interfaces), rather than uniformly across the entire semiconductor surface. This localized application provides targeted protection to vulnerable areas while leaving the active emission regions uncovered and functional. The structure's optical benefits are concentrated at critical interfaces where light management is most needed, maximizing protection efficiency without unnecessarily reducing active area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability of electrode connections and increases light extraction efficiency by reflecting and directing light emitted from the semiconductor layers, resulting in improved performance and stability of the semiconductor light-emitting device.
Implementation Method 1
a reflective protection structure extending from an upper surface of the electrode layer to the upper surface of the semiconductor region... reflecting and directing light emitted from the semiconductor layers
Implementation Method 2
a multi-reflective layer in which a first layer having a first refractive index and a second layer having a second refractive index smaller than the first refractive index
Data Source
AI summary
A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.