Semiconductor Light Emitting Device Second Conductive Layer Thickness
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in maximizing light extraction efficiency due to excessive thickness of the second conductive semiconductor layer, which leads to absorption of reflected light, and high contact resistance, resulting in decreased emission efficiency and increased driving voltage.
Innovation Solution
A semiconductor light emitting device structure is developed with a second conductive semiconductor layer of 45 nm to 100 nm thickness, incorporating a reflection assisting layer and a transparent conductive layer, and magnesium doping in stages to minimize light absorption and resistance, while maintaining optimal thickness and refractive index relationships to enhance constructive interference and light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the second conductive semiconductor layer is made thicker to reduce contact resistance, then electrical conductivity is improved, but light absorption increases and light extraction efficiency decreases
Solution Approach 1:
The patent optimizes the thickness of the second conductive semiconductor layer to a specific range (45-100 nm) to simultaneously achieve low contact resistance and minimal light absorption. This parameter optimization resolves the contradiction by finding the optimal thickness value that balances electrical conductivity and optical transparency.
Solution Approach 2:
The patent introduces a reflection assisting layer with specific refractive index properties between the second conductive semiconductor layer and the reflection layer. This composite structure reduces light absorption by enhancing constructive interference, thereby resolving the contradiction between maintaining thin layer thickness for transparency and achieving sufficient electrical conductivity.
2Loss of energy
If the second conductive semiconductor layer is made thinner to reduce light absorption, then light extraction efficiency is improved, but contact resistance increases
Solution Approach 1:
The patent determines the optimal thickness range (45-100 nm) for the second conductive semiconductor layer to minimize light absorption while maintaining adequate electrical conductivity. This parameter optimization resolves the contradiction by identifying the thickness value that balances optical and electrical performance.
Solution Approach 2:
The reflection assisting layer with optimized refractive index is introduced to enhance light extraction efficiency, allowing the second conductive semiconductor layer to be thinner while maintaining sufficient electrical performance. This composite approach resolves the contradiction between thinness for transparency and thickness for conductivity.
3Ease of manufacture
If the thickness of the second conductive semiconductor layer is not optimized, then manufacturing is simpler, but light extraction efficiency and emission performance decrease
Solution Approach 1:
The patent establishes a specific thickness range (45-100 nm) for the second conductive semiconductor layer and a refractive index range (1.4-1.7) for the reflection assisting layer. These parameter specifications provide clear manufacturing targets that balance ease of production with optimized light extraction efficiency and emission performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves light extraction efficiency, reduces driving voltage, and maintains efficient light emission by minimizing absorption within the second conductive semiconductor layer and optimizing the refractive index and thickness relationships, thereby enhancing overall performance.
Implementation Method 1
optimizing the refractive index and thickness relationships to enhance constructive interference and light extraction
Implementation Method 2
excessive thickness of the second conductive semiconductor layer, which leads to absorption of reflected light
Data Source
AI summary
A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.