Semiconductor Light Emitting Device with Dual Oxidation Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor light emitting devices face challenges in achieving high light detection precision due to the integration of light emitting and detecting elements, which can lead to errors from natural emission light interference, and the complexity of oxidation processes for controlling light output.
Innovation Solution
A semiconductor light emitting device with a surface-emitting semiconductor laser element and a semiconductor light detecting element, where one or more second oxidation layers are provided between the active layer and the light detecting element to suppress natural emission light, and both oxidation layers are formed in a single process, simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the semiconductor light emitting element and the semiconductor light detecting element are integrally formed, then the number of parts is reduced and assembly precision requirements are lowered, but the light detecting element detects both induced emission light and natural emission light causing measurement errors
Solution Approach 1:
The patent divides the light emission spectrum into two segments: natural emission light (broad spectrum) and induced emission light (laser light at specific wavelength). The light detecting element is structured to selectively detect only the induced emission light at the laser wavelength, while rejecting natural emission light. This segmentation in spectral detection resolves the contradiction by maintaining integral formation (reducing parts) while achieving precise measurement (excluding natural emission interference).
Solution Approach 2:
The patent introduces an optical filter or wavelength-selective detection mechanism as an intermediary between the light emitting element and the light detecting element. This intermediary selectively transmits or detects only the induced emission light at the laser wavelength while blocking natural emission light. This allows integral formation to be maintained while measurement precision is improved by excluding unwanted natural emission light.
2Measurement precision
If a control layer is provided in the semiconductor light detecting element to interrupt natural emission light, then light detection precision is improved, but the oxidation process becomes extremely complicated with multiple steps
Solution Approach 1:
The patent combines the control layer formation with the existing current narrowing layer structure. Both the control layer and current narrowing layer are formed in the same oxidation process using a single oxidation step. The oxidation conditions are optimized to simultaneously create both functional layers with appropriate thicknesses and positions. This merging of processes resolves the contradiction by achieving high light detection precision through control layer formation while maintaining manufacturing simplicity through process integration.
Solution Approach 2:
The patent designs the oxidation process to serve multiple functions simultaneously: forming the control layer for natural emission light interruption, forming the current narrowing layer for current confinement, and creating the appropriate structural profile for both layers. This multi-functionality in a single oxidation process resolves the contradiction by achieving precise light detection control without complicating the manufacturing process.
3Manufacturing precision
If multiple oxidizing processes are executed to form control layers with different mesa diameters, then the desired oxidation amounts for different layers are achieved, but productivity deteriorates extremely
Solution Approach 1:
The patent combines multiple oxidation steps into a single oxidation process by carefully designing the layer structure and oxidation conditions. The first and second control layers are formed simultaneously in one oxidation step, with their respective thicknesses and positions controlled by the underlying layer structures and oxidation parameters. This merging resolves the contradiction by achieving precise oxidation control for multiple layers while maintaining high productivity through process simplification.
Solution Approach 2:
The patent prepares the layer structure in advance with specific thicknesses and compositions that enable selective oxidation during a single oxidation process. The first and second semiconductor layers are pre-formed with appropriate thicknesses and material compositions that allow the oxidation process to automatically create the desired control layers with correct dimensions. This preliminary preparation resolves the contradiction by enabling precise multi-layer oxidation control without requiring multiple oxidation steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light detection precision by reducing the propagation of natural emission light to the detecting element, while maintaining a simpler and less stressful manufacturing process, thereby improving the reliability of the device.
Implementation Method 1
The control layer is formed by oxidizing a part of a semiconductor material of the semiconductor light detecting element
Implementation Method 2
a semiconductor light detecting element for detecting the branched emission light
Data Source
AI summary
The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.