Semiconductor Light Emitting Device Electron Barrier Layer
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Solution Overview
Problem
Current semiconductor light emitting devices face limitations in achieving efficient light emission due to inadequate electron and hole combination probabilities within the active layer, leading to suboptimal light generation efficiency.
Innovation Solution
Incorporating an electron barrier layer between or around the quantum well and quantum barrier layers in the active layer of the semiconductor light emitting device to enhance electron confinement and uniform distribution, thereby improving the recombination probability of electrons and holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electron barrier layer is added between active layers, then electron confinement and recombination probability improve, but device structure complexity increases
Solution Approach 1:
The active layer is segmented into multiple quantum well layers separated by quantum barrier layers, with an additional electron barrier layer inserted between them. This segmentation allows electrons to be confined in specific regions while maintaining a modular structure that can be systematically designed and manufactured.
Solution Approach 2:
The electron barrier layer acts as an intermediary component between the quantum well layers. It mediates electron transport by providing a controlled energy barrier that enhances electron confinement in the quantum wells while allowing selective electron passage, thereby improving recombination probability without requiring complete structural redesign.
2Productivity
If quantum well and barrier layers are used in active layer, then light emission efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes parameter changes in the form of alternating layers with different bandgap energies (quantum wells with lower bandgap and quantum barriers with higher bandgap). This parameter variation enables efficient carrier confinement and light emission while maintaining a repetitive structure that can be grown using standard epitaxial techniques with controlled composition and thickness parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The electron barrier layer increases light generation efficiency by improving electron and hole combination, reducing excess electron leakage, and enhancing the overall performance of the LED chip.
Implementation Method 1
Incorporating an electron barrier layer between or around the quantum well and quantum barrier layers in the active layer of the semiconductor light emitting device to enhance electron confinement
Implementation Method 2
a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer, wherein the first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer
Implementation Method 3
A III-V group nitride semiconductor has been variously used for an optical device such as blue/green light emitting diodes (LEDs)... can perform high efficient light emission
Data Source
AI summary
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.