Semiconductor Light Emitting Element Insulating Layer Spacing
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Solution Overview
Problem
Conventional semiconductor light emitting elements experience a decrease in luminance and eventually reach a non-lighting state due to ion migration caused by moisture exposure, leading to a short device life.
Innovation Solution
The semiconductor light emitting element is designed with a first insulating layer and electrode configuration where the insulating layer and electrode are spaced apart, reducing air penetration and ion migration, and includes a conductive layer with higher contact resistance to further suppress ion movement, thereby maintaining high reflectance and light extraction efficiency over time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the insulating layer and electrode are arranged in contact with each other, then the device structure is simplified, but ion migration occurs due to moisture exposure leading to short device life
Solution Approach 1:
The device is divided into distinct functional regions: a first region where the insulating layer contacts the semiconductor layer, and a second region where the electrode contacts the semiconductor layer. These regions are spaced apart in the planar direction, preventing direct contact between the insulating layer and electrode while maintaining structural organization.
Solution Approach 2:
A conductive layer with higher contact resistance is introduced as an intermediary between the electrode and the semiconductor layer. This intermediate layer suppresses ion migration by providing higher resistance to ion transport while maintaining electrical conductivity for device operation.
2Reliability
If the insulating layer and electrode are spaced apart, then ion migration is suppressed improving device life, but the device structure becomes more complex
Solution Approach 1:
The device structure is segmented into distinct functional regions: a first region for the insulating layer and a second region for the electrode, spaced apart in the planar direction. This segmentation prevents harmful interactions while maintaining individual functionality of each component.
Solution Approach 2:
Different regions of the device are assigned different properties: the insulating layer region provides electrical isolation, the electrode region provides electrical connection, and the conductive layer provides controlled resistance. Each region has optimized local properties suitable for its specific function.
3Reliability
If a conductive layer with higher contact resistance is added, then ion migration is further suppressed, but the device structure becomes even more complex
Solution Approach 1:
A conductive layer with higher contact resistance is positioned between the electrode and the semiconductor layer to act as a barrier against ion migration. This intermediate layer provides controlled resistance that blocks ion transport while allowing electrical current to pass for device operation.
Solution Approach 2:
The device employs a composite structure combining multiple materials with different properties: the insulating layer (electrical isolation), the electrode (electrical connection), and the conductive layer with higher contact resistance (ion barrier). This composite approach leverages the complementary properties of different materials to achieve superior performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the lifetime of the semiconductor light emitting element by preventing ion migration and maintaining high light extraction efficiency, resulting in a semiconductor light emitting element with superior life characteristics compared to conventional designs.
Implementation Method 1
a first electrode made of a high reflective material located inside the first insulating layer
Data Source
AI summary
A semiconductor light emitting element according to the present invention is obtained by forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate. The semiconductor light emitting element includes a first insulating layer, a first electrode, and a second electrode. The first insulating layer is formed in a position closer to the substrate than the first semiconductor layer in a first direction orthogonal to a surface of the substrate and is formed so as to protrude outward from a first surface being a surface on a side of the substrate of the first semiconductor layer as seen in the first direction. A first region where the first surface and the first insulating layer face each other and a second region where the first surface and the first electrode face each other are spaced apart in a direction parallel to the surface of the substrate.