Rectangular Semiconductor Light Emitting Element with Lattice Electrodes
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Solution Overview
Problem
Current semiconductor light emitting elements with electrodes on the same surface face challenges in achieving even current distribution, leading to uneven light emission and reduced efficiency due to the need for increased electrode area, which compromises the light emitting area and output.
Innovation Solution
A semiconductor light emitting element with a rectangular shape featuring a lattice arrangement of first electrodes along one side and second electrodes on the adjacent side, where the distance between electrodes in the row direction is larger than in the column direction, allowing for even current distribution without expanding the electrode area, thereby reducing potential difference and enhancing light emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the electrode area is increased to even the current distribution, then the current distribution becomes even, but the light emitting area decreases and the output lowers
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode and multiple second electrodes arranged in a specific pattern. This segmentation allows the current distribution to be optimized without requiring a single large electrode area, thus maintaining the light emitting area while achieving even current distribution.
Solution Approach 2:
The patent applies different electrode configurations to different regions of the semiconductor light emitting element. The first electrode and second electrodes are positioned at specific locations with different dimensions, creating local variations in current density that collectively achieve uniform overall current distribution without expanding the total electrode area.
2Manufacturing precision
If the electrode area is increased to even the current distribution, then the current distribution becomes even, but the light emitting efficiency lowers
Solution Approach 1:
By segmenting the electrode into multiple smaller electrodes rather than one large electrode, the patent achieves even current distribution while minimizing the total area occupied by electrodes. This segmentation strategy maintains a high ratio of light emitting area to electrode area, thereby preserving light emitting efficiency.
Solution Approach 2:
The patent optimizes specific parameters of the electrode configuration, including the dimensions and spacing of the first and second electrodes. By carefully controlling these parameters, the current distribution is optimized for uniformity while the overall electrode area is kept minimal, thus maintaining high light emitting efficiency.
3Shape
If the feeding sections are arranged at equal distance in a matrix form, then the electrode arrangement is regular, but the current cannot be sufficiently evened
Solution Approach 1:
The patent introduces asymmetry into the electrode arrangement by positioning the first electrode and multiple second electrodes at non-uniform intervals. Specifically, the distance relationships between electrodes are designed such that D1 > D2 and D1 > D3, breaking the symmetry of conventional matrix arrangements. This asymmetric configuration enables better current distribution uniformity while maintaining a regular overall pattern.
Data Source
AI summary
A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.