Semiconductor Devices TRIZ Cases
- SiC Trench Gate Channel Threshold and Leakage Control
A silicon carbide trench gate structure uses a high-concentration channel implantation layer to enhance electron mobility.
- Wafer-Level LED Package Fabrication Process
Wafer-level LED package fabrication bonds semiconductor stacks to a substrate with lead electrodes, eliminating individual chip handling and wire bonding steps.
- FinFET Drive Current via Center Fin Channel and Edge Fin Extraction
Extracting edge fins reduces process variations while center fins increase drive current in scaled FinFETs.
- FinFET Gate Oxide Etching Selectivity
Selective etching removes leakage paths under spacers, ensuring accurate electron movement in FinFET structures.
- Wafer-Level LED Package Polymer Layer Via Holes
Via holes in polymer layer connect wafer-level LED electrodes to substrate, mitigating thermal stress during manufacturing.
- LED Package Phosphor Layer Thickness Gradient
Varying phosphor layer thickness manages peripheral light radiation to improve emission efficiency.
- Dopant Diffusion Blocking Superlattices for Semiconductor Contact Resistance
A dopant diffusion blocking superlattice modifies the energy band structure to reduce contact resistance in semiconductor devices.
- Avalanche Photodiode Dark Current Noise Reduction
Nitride-based semiconductor multi-quantum well structure absorbs 1550 nm light while minimizing dark current noise at room temperature.
- Ferroelectric 2D Material Gate Dielectric for CMOS Scaling
Integrating a negative capacitance 2D material into the gate stack resolves integration density challenges by boosting the on-off current ratio.
- GaN HEMT Gate Bridge Structure for Normally-Off Operation
A high electron mobility transistor uses a segmented gate bridge to form a depletion region in the two-dimensional electron gas channel layer.
- Semiconductor Light Emitting Element Asymmetric Electrode Design
An asymmetric front surface electrode and segmented ohmic contact joint reduce light absorption by the electrode while maintaining effective current spreading.
- AlN Inter-layer Mitigates GaN Substrate Bowing
Alternating AlN inter-layers within GaN layers mitigate substrate bowing and cracking while improving breakdown voltage.
- Quantum Dot Surface Control for LED Light Extraction
Multiple etch-resistant layers mask quantum dot placement to resolve uniformity trade-offs and improve light extraction.
- Rectangular Semiconductor Light Emitting Element with Lattice Electrodes
A semiconductor light emitting element uses a lattice arrangement of first electrodes to ensure even current distribution across the device surface.
- Semiconductor Light-Emitting Device Guard Ring Doping
Guard ring doping minimizes side wall area to reduce non-radiative recombination and improve light extraction efficiency.
- Photovoltaic Panel Recycling via Inclined Slit Separation
Inclined planar element with conveyor slits separates silicon from glass, resolving contamination and cell damage from mechanical grinding.
- Semiconductor Light Emitting Device Multilayer Metal Pillars
Multilayer metal pillars in a semiconductor light emitting device combine copper conductivity with nickel hardness, reducing shape unevenness during grinding.