Semiconductor Light Emitting Element Vertical Electrode Design
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Solution Overview
Problem
Conventional semiconductor light emitting elements face challenges in maximizing light emission when face-up mounted, as the area of the light emitting layer is reduced, and light is often absorbed by electrodes, hindering increased light output.
Innovation Solution
A semiconductor light emitting element design featuring a compound semiconductor light emitting layer with specific transparent insulating layers and electrodes, optimized for light transmission and reflection, allowing for increased light emission without reducing the light emitting layer area and minimizing absorption by electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the n-electrode is formed by removing both the p-type semiconductor layer and the light emitting layer, then the n-electrode can be electrically connected to the n-type semiconductor layer, but the area of the light emitting layer is decreased, reducing light emission
Solution Approach 1:
The patent transitions from planar electrode formation to three-dimensional vertical electrode formation by creating via holes through the semiconductor layers. This allows the n-electrode to be connected to the n-type semiconductor layer without removing the light emitting layer, thus maintaining the light emitting area while achieving reliable electrical connection through the vertical dimension.
Solution Approach 2:
The patent introduces transparent insulating layers as intermediaries between the electrodes and the light emitting layer. These layers fill the via holes and provide electrical insulation while allowing light transmission, enabling the n-electrode to be positioned below the light emitting layer without directly contacting or removing it, thereby preserving light emission area.
2Illumination intensity
If the n-electrode is provided on a part opposite to the light emitting layer without removing any layer, then the light emitting layer area is maintained, but the light emitted from the light emitting layer is absorbed by the n-electrode
Solution Approach 1:
The patent uses transparent insulating layers as intermediary materials between the n-electrode and the light emitting layer. These layers are specifically chosen to be transparent to the wavelength of light emitted by the light emitting layer, allowing light to pass through the electrode structure without being absorbed, thus maintaining both electrical connection and light transmission.
Solution Approach 2:
The patent changes the optical parameter (transparency) of the insulating layer to match the emission wavelength of the light emitting layer. By selecting insulating materials with appropriate optical transmission characteristics, the electrode structure becomes transparent to the emitted light, eliminating absorption losses while maintaining electrical functionality.
3Reliability
If conventional electrode formation methods are used, then the electrical connection is achieved, but the overall light emission from the semiconductor light emitting element is reduced
Solution Approach 1:
The patent reformats the electrode connection from a lateral/planar approach to a vertical approach by forming via holes through the semiconductor layers. This vertical connection method allows the light emitting layer to maintain its full area for light emission while the n-electrode is positioned in the vertical dimension below, eliminating the trade-off between electrical connection and light emission area.
Solution Approach 2:
The patent introduces transparent insulating layers as mediators that fill the via holes and surround the n-electrode. These intermediaries provide electrical insulation and light transmission pathways, enabling the n-electrode to be positioned vertically below the light emitting layer without interfering with light emission, thus achieving both reliable electrical connection and high light emission efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances light emission efficiency by ensuring light is effectively transmitted and reflected, rather than absorbed, thereby increasing the overall light output of the semiconductor light emitting element when face-up mounted.
Implementation Method 1
the first thickness is set at a value with which light of a wavelength emitted from the light emitting layer is likely to be reflected
Implementation Method 2
a third thickness that is a sum of the first thickness and the second thickness is set at a value with which light of a wavelength emitted from the light emitting layer is likely to be transmitted
Data Source
AI summary
A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160). A p-side power supply electrode (152) in the p-side power supply portion (150) and an n-side power supply electrode (162) in the n-side power supply portion (160) are provided at a rear side of the p-type semiconductor layer (140), a power supply insulating layer (170) set to have a first thickness is formed between the p-type semiconductor layer (140) and the p-side power supply electrode (152) or the n-side power supply electrode (162), and a portion where these electrodes are not provided is set to have a third thickness by forming the protective insulating layer (180) set to have a second thickness in addition to the power supply insulating layer (170).