Solid-State Devices TRIZ Cases

A soluble n-type ladder copolymer enables stable thin-film transistor fabrication using common organic solvents.

Buffer patterns with 5000 to 50000 cps viscosity absorb impact stress and prevent infiltration between seal and display areas.

Segmented p-side and n-side contact regions on an insulating carrier structure define distinct electrical pathways for optoelectronic semiconductor chips.

Segmented fluorescent layers in a wavelength conversion adhesive structure resolve non-uniform color temperature across emission angles.

Asymmetric gate line spacing compensates for exposure critical dimension fluctuations, reducing parasitic capacitance and mitigating Chuck Mura defects.

A display panel positions the sealant midline farther from the non-display boundary than the pressure sensor center to optimize shear force distribution.

A three-dimensional memory device uses segmented select gates to control gate-induced leakage current during erase operations.

A double bank structure manages organic light emitting material deposition to enhance thickness uniformity across sub-pixels.

Enlarged lead frame regions expand wire bonding areas without increasing chip spacing, improving luminous efficacy and heat dissipation.

A 3D package method exposes conductive layer ends below wafer surfaces to enable precise solder insertion during reflow stacking.

Barium and titanium react with NaOH to form a composite material that deposits onto polyimide, resolving the trade-off between thickness and surface hardness.

A semiconductor light emitting element uses vertical electrodes and transparent insulating layers to maintain the full area of the light emitting layer.

Polysilicon sacrificial layers replace nitride materials in vertical memory device fabrication to prevent structural deformation.

Composite inorganic layers resist water vapor and oxygen penetration to extend OLED service life.

Atomic switching elements in via-interconnections selectively activate CMOS circuit blocks, reducing standby power without increasing device complexity.

Selective ion implantation tunes sub-threshold swing in pixel TFTs without degrading driving circuit reliability.

Segmenting through holes via an insulator increases wiring density while eliminating bent PCB structures that cause metal wiring cracks.

A segmented mask structure combines a transparent sacrificial layer with opaque patterns to form high aspect ratio openings in semiconductor devices.

A substrate holds spatially separated conductive coating regions that connect LED groups in series to reduce total current requirements.

Recessed metal lines feature a corrugated longitudinal cross-section that reduces breakage risk during bending cycles for flexible displays.

An OLED encapsulation structure uses an ambipolar organic copolymer layer to form a uniform coating between inorganic barriers.

A handle wafer protects circuitry during substrate removal, enabling reliable oxide-to-oxide bonding despite surface unevenness.

A buried conductive layer in the substrate enables vertical current flow within a Hall sensor element.

A dielectric reflecting film replaces metallic layers in optical couplers to guide light via total internal reflection between mold resins.

Segmented graphite and copper layers cool flexible displays, resolving the contradiction between heat dissipation performance and bending durability.

Glass or sapphire lenses mounted via non-polymer bonding prevent metalized component damage during assembly.

Segmented pad slits in phase change memory layers accommodate thermal expansion, preventing peeling from the insulating layer.

Separate injection holes deliver reaction gases independently to prevent mixing and reduce thermal deformation in display device manufacturing.

A die-bonding substrate with optimized conductive lines and solid-state phosphor enhances heat drainage.

Physical sensors detect finger position and force magnitude to initiate functions based on input parameters.

Asymmetric SiC device orientation minimizes stacking fault propagation, enhancing reliability in high-power applications.

Cesium-formamidium substitution stabilizes the crystal structure, eliminating halide segregation and enhancing thermal reliability.

High refractive index layers eliminate complex wavelength control films, reducing manufacturing time while suppressing flare and coloring.

An optical sensor detects contaminants on the lower electrode, triggering a repair fluid that increases resistance and suppresses leakage currents.

Applying a polyvinyl pyrrolidone layer on dicing tapes prevents contaminant adhesion and eliminates wafer re-contamination during cleaning.

Direct connection paths reduce signal delay while limiting peak current damages in resistive memory devices.

An arc-shaped touch sensing element follows the rounded corner outline of an organic electroluminescent display panel to maintain pattern continuity.

Copper film oxidation removes oxygen from the sealed environment, extending OLED device life by preventing cathode degradation.

Internal gate resistors in sensor transistor cells measure junction temperature directly, eliminating thermal delays from external NTC sensors.

Low-temperature HfO2 enables back-end dual-gate FE-FET integration, freeing front-end space and increasing memory density.

Inclined light extraction structure redirects guided wave emission from organic electroluminescent elements.

Forming a semiconductor connection layer in the seal portion strengthens adhesive force, avoiding additional processes required for organic insulating films.

An organic protective layer with protuberances improves optical coupling output while blocking water and oxygen penetration.

An array substrate merges light blocking portions with position detecting electrodes to simplify layer patterning.

Dual slurry chemical mechanical polishing patterns phase-change memory layers with distinct selectivities.

Inserting a heavy metal layer into the magnetic free layer reduces the current required for switching, addressing high power consumption issues.