Semiconductor Device Low-Permittivity Layer Signal Distortion
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Solution Overview
Problem
Existing semiconductor devices using field effect transistors for radio frequency switches face challenges in suppressing the generation of signals other than input or output signals, leading to distortion such as harmonic and intermodulation distortions due to nonlinear parasitic capacitance.
Innovation Solution
Incorporating a low-permittivity layer within the insulating layer of the semiconductor device, positioned between the metal layer and the substrate, to reduce nonlinear parasitic capacitance and minimize signal distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a space is formed around a gate electrode to reduce parasitic capacitance, then the loss of passing radio frequency signal is reduced, but the generation of distorted signals (harmonic and intermodulation distortions) cannot be suppressed
Solution Approach 1:
The patent applies local quality by creating a low-permittivity region specifically in the interconnection region below the metal layer, while maintaining other structural elements. This localized modification of permittivity properties targets the parasitic capacitance problem without affecting other parts of the device, thereby reducing signal loss while suppressing distorted signal generation.
Solution Approach 2:
The patent changes the permittivity parameter of the insulating layer by introducing a low-permittivity layer with permittivity lower than the surrounding insulating material. This parameter change directly reduces the nonlinear parasitic capacitance between the metal layer and substrate, simultaneously achieving reduced signal loss and suppressed signal distortion.
2Device complexity
If conventional insulating layers are used between metal layer and substrate, then structural simplicity is maintained, but nonlinear parasitic capacitance causes signal distortion
Solution Approach 1:
The patent uses composite materials by combining the conventional insulating layer with a low-permittivity layer to form a composite insulating structure. This composite approach maintains overall structural simplicity while the low-permittivity component within the composite reduces nonlinear parasitic capacitance and suppresses signal distortion.
Solution Approach 2:
The low-permittivity layer acts as an intermediary between the metal layer and the substrate, mediating the electric field interactions. This intermediary layer reduces the direct capacitive coupling that causes nonlinear parasitic effects and signal distortion, while maintaining the basic two-layer insulating structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses the generation of unwanted signals, thereby reducing harmonic and intermodulation distortions in the output signal, enhancing the semiconductor device's performance by minimizing nonlinearity.
Implementation Method 1
a low-permittivity layer provided in the insulating layer below the metal layer and having a lower permittivity than the insulating layer
Data Source
AI summary
A semiconductor device in which the generation of a distortion of a signal is suppressed, and a method for manufacturing the semiconductor device are disclosed. The semiconductor device includes a transistor region in which a field effect transistor is provided; and an interconnection region in which a metal layer electrically connected to the field effect transistor is provided. The interconnection region includes an insulating layer provided between the metal layer and a substrate, and a low-permittivity layer provided in the insulating layer below the metal layer and having a lower permittivity than the insulating layer.