Semiconductor Marking Dam Structure for Resin Protection

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Solution Overview

Problem

In semiconductor device manufacturing, the increasing number of device regions on a base material reduces vacant regions, leading to shorter distances between identification information and device regions, causing the identification information to be covered by resin during sealing, which hampers reading reliability.

Innovation Solution

A manufacturing method involving the formation of a sealing body with first identification information outside device regions, followed by reading and affixing second identification information, and creating a dam part between the marking region and device regions to prevent resin leakage and ensure readable codes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the number of device regions is increased to reduce manufacturing cost, then productivity is improved, but the distance between identification information and device region becomes shorter causing reading reliability to deteriorate

Engineering Contradiction:
Improvenumber of device regionsVSAvoidreading reliability of identification information
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent divides the substrate into distinct regions with a dam structure separating the marking region from device regions. This segmentation prevents resin from the sealing body from encroaching on the marking region, ensuring identification information remains readable even when device regions are densely packed.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dam part acts as an intermediary barrier between the marking region and device regions. This intermediate structure prevents direct contact between the sealing resin and identification information, maintaining code readability while allowing high-density device placement.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If identification information is formed in vacant regions of base material, then manufacturing cost is reduced, but resin leakage during sealing covers the identification information causing reading reliability to deteriorate

Engineering Contradiction:
Improvemanufacturing costVSAvoidreading reliability of identification information
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The dam part is formed in advance before sealing to prevent resin leakage. This preliminary protective structure blocks resin from reaching the marking region during the sealing process, ensuring identification information remains exposed and readable while maintaining cost-effective manufacturing.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The marking region and dam structure are prepared before the sealing process. This preliminary arrangement ensures that when resin is later supplied during sealing, the identification information is already protected and positioned to remain readable.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If a dam part is formed to prevent resin leakage, then reading reliability is improved, but device complexity increases

Engineering Contradiction:
Improvereading reliability of identification informationVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The dam structure is implemented locally only where needed - at the boundary between marking and device regions - rather than throughout the entire device. This localized approach provides necessary protection for identification information while minimizing overall structural complexity.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9293383B2Method of manufacturing semiconductor device
Publication Date: 2016.03.22 RENESAS ELECTRONICS CORP
  • US9293383B2 patent drawing
  • US9293383B2 patent drawing
  • US9293383B2 patent drawing

AI summary

Reading reliability of a code formed in a semiconductor device is improved.A manufacturing method of semiconductor devices according to one embodiment includes a step of forming a sealing body MR in a plurality of device regions DVP with a code (first identification information) MK3 being formed outside the device regions DVP of a wiring substrate. Also, the manufacturing method of semiconductor devices according to one embodiment includes a step of, after forming the sealing body MR, reading the code MK3 and affixing another code (second identification information) to the sealing body MR. Further, before the step of forming the sealing body MR, a dam part DM is formed between a marking region MKR in which the code MK3 is formed and the device regions DVP.