Semiconductor Memory Sense Amplifier Layout for Faster Data Transfer
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Solution Overview
Problem
Existing semiconductor memories, particularly NAND flash memories, face challenges in achieving high-speed operations due to inefficiencies in the design of sense amplifier modules, which affect data transfer speeds.
Innovation Solution
The semiconductor memory incorporates a novel configuration of sense amplifier modules with optimized layouts and pre-charge circuits, including specific transistor arrangements and hookup circuits, to enhance data transfer efficiency and speed up operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional sense amplifier module design is used, then device complexity is reduced, but operational speed and data transfer efficiency deteriorate
Solution Approach 1:
The sense amplifier module is divided into distinct functional regions: a first circuit area containing the latch circuit, a second circuit area containing the hookup circuit, and a third circuit area containing the pre-charge circuit. This segmentation allows each region to be optimized independently for speed while managing complexity through modular organization.
Solution Approach 2:
The patent introduces a spatial dimension to circuit layout by arranging circuits in specific areas along a bit line direction. The pre-charge circuit is positioned in a third circuit area between the first and second circuit areas, creating an optimized signal path that reduces propagation delay and enhances operational speed.
2Productivity
If conventional sense amplifier layout is used, then ease of manufacture is improved, but data transfer efficiency deteriorates
Solution Approach 1:
Different regions of the sense amplifier module are assigned specific functions and layout optimizations. The hookup circuit in the second circuit area is specifically configured to control bit line connection, while the pre-charge circuit in the third area is optimized for pre-charge operations. This local optimization enhances data transfer efficiency without requiring complete redesign of the entire module.
Solution Approach 2:
The pre-charge circuit is positioned and configured to perform pre-charge operations before data transfer occurs. By preparing the bit lines in advance through the strategically placed pre-charge circuit, the system eliminates waiting time and improves data transfer efficiency without adding complex manufacturing steps.
3Speed
If sense amplifier circuits are closely integrated, then area is reduced, but signal interference and speed deteriorate
Solution Approach 1:
The patent utilizes the bit line direction as a spatial dimension to arrange circuits. By positioning the pre-charge circuit in a third circuit area between the latch circuit area and hookup circuit area along the bit line direction, the design achieves optimal signal paths that enhance speed while managing area through strategic spatial arrangement rather than simple close integration.
Data Source
AI summary
A semiconductor memory includes a memory cell, a bit line electrically connected to the memory cell, a sense amplifier including a first latch circuit, a first hookup circuit, a second latch circuit, a first wiring, and a first pre-charge circuit. The sense amplifier is in a first circuit area. The first hookup circuit is in a second circuit area and configured to control connection between the bit line and the sense amplifier. The first wiring is connected between the first latch circuit and the second latch circuit. The first pre-charge circuit includes a first transistor in a third circuit area between the first circuit area and the second circuit area. The first transistor has a first end connected to the first wiring at a first position in the third circuit area and a second end connectable to a terminal supplied with one of a pre-charge voltage and a ground voltage.