Semiconductor Memory Programming with Dummy-Channel Charge Spreading
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Solution Overview
Problem
High programming voltages in semiconductor devices attract electrons in the channel of dummy cells, causing programming interference in memory cells due to electron attraction from the dummy cell during the programming process.
Innovation Solution
A programming method that includes applying a precharging voltage to the programmed memory cell between the to-be-programmed memory cell and the dummy cell to drift and spread electrons in the dummy cell's channel, followed by applying a first pass voltage to unprogrammed memory cells separated by a preset number and a lower second pass voltage to unprogrammed cells to mitigate electron concentration and enhance the boosting potential of the to-be-programmed memory cell.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a high programming voltage is applied to the word line corresponding to the memory cell, then the programming speed is improved, but the memory cell suffers programming interference from electrons attracted from the dummy cell channel
Solution Approach 1:
A precharging voltage is applied to the word line corresponding to the programmed memory cell before the programming voltage is applied to the to-be-programmed memory cell. This preliminary action redistributes electrons in the channel before programming, reducing the harmful electron attraction from the dummy cell during the subsequent programming operation, thereby resolving the contradiction between programming speed and programming interference
Solution Approach 2:
The precharging voltage creates a counter-effect that opposes the harmful electron attraction that would occur during high-voltage programming. By pre-charging the channel, the system counteracts the potential interference before it can affect the programming operation, allowing high programming voltages to be used without suffering from electron attraction interference
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces programming interference by spreading electrons away from the to-be-programmed memory cell, thereby improving the programming efficiency and reducing electron attraction, enhancing the boosting potential and minimizing interference.
Implementation Method 1
a precharging voltage is applied to a word line corresponding to a programmed memory cell of the plurality of first memory cells... to drift and spread electrons in the dummy cell's channel
Implementation Method 2
a programming voltage is applied to a word line corresponding to the to-be-programmed memory cell
Data Source
AI summary
A programming method and a semiconductor device are provided. The semiconductor device includes a memory string that includes a plurality of first memory cells and a first dummy cell stacked in sequence, and each first memory cell is connected to a respective word line, and a gate of the first dummy cell is connected to a first dummy word line. The method includes: in a programming phase, applying a first pass voltage to a word line corresponding to a first unprogrammed memory cell, wherein the first unprogrammed memory cell is an unprogrammed memory cell of the plurality of first memory cells separated from a to-be-programmed memory cell by a first preset number of first memory cells; and after applying the first pass voltage to the word line corresponding to the first unprogrammed memory cell, applying a programming voltage to the word line corresponding to the to-be-programmed memory cell.