3D Semiconductor Memory Charge Storage Segmentation
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Solution Overview
Problem
Three-dimensional semiconductor memory devices face reliability issues due to charge movement and interface characteristics between different material layers, leading to decreased performance and durability.
Innovation Solution
A semiconductor device design featuring a channel layer with alternating protrusions and depressions, surrounded by a tunnel insulating layer, first and second charge storage patterns, and blocking insulation patterns, where the blocking insulation patterns are oxidized to prevent charge movement and separate the charge storage patterns, enhancing the structural integrity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are stacked in multiple layers to increase integration density, then the degree of integration is improved, but charge movement along the charge storage layer causes reliability deterioration
Solution Approach 1:
The charge storage layer is divided into multiple independent stacked layers, each capable of storing charges independently. This segmentation prevents charge movement between layers and allows each layer to function as a separate memory cell, resolving the reliability issue while maintaining high integration density
Solution Approach 2:
A blocking insulating layer is introduced between adjacent charge storage layers to act as an intermediary barrier. This blocking layer prevents charge movement and interaction between stacked charge storage layers, eliminating the harmful charge migration effect while enabling multi-layer stacking for high integration
2Ease of operation
If charges are stored in portions of the charge storage layer at intersections with word lines, then memory cell functionality is achieved, but charge movement in the vertical direction deteriorates reliability
Solution Approach 1:
The charge storage layer is segmented into multiple stacked independent layers, where each layer's charges are confined to its own layer. This prevents vertical charge movement between layers while maintaining the ability to store charges at word line intersections within each layer
Solution Approach 2:
Blocking insulating layers are placed between adjacent charge storage layers to serve as intermediaries that block charge movement. This allows each charge storage layer to independently store charges at intersections with word lines without charge migration to adjacent layers, improving charge storage stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents undesirable charge-trapping interfaces and improves the reliability of three-dimensional semiconductor memory devices by structurally separating charge storage patterns and blocking insulation patterns, thereby enhancing the device's performance and durability.
Implementation Method 1
the blocking insulation patterns are oxidized to prevent charge movement and separate the charge storage patterns
Data Source
AI summary
A semiconductor device includes a channel layer including a sidewall having protrusions and depressions alternating with each other in a direction in which the channel layer extends, a tunnel insulating layer surrounding the channel layer, first charge storage patterns surrounding the tunnel insulating layer formed in the depressions, blocking insulation patterns surrounding the first charge patterns formed in the depressions, wherein the blocking insulating patterns include connecting portions coupled to the tunnel insulating layer, and second charge storage patterns surrounding the tunnel insulating layer formed in the protrusions.