Semiconductor Memory Refresh via Data Copying
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face data retention issues due to continuous stress on memory cells during repeated refresh operations, leading to deterioration of electrical characteristics and reduced reliability.
Innovation Solution
A semiconductor device and method that involves copying data from a first memory block to a second memory block, changing the data, and then refreshing the first memory block with the altered data, thereby distributing stress and improving data retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If refresh operation is repeated to retain data in memory cells, then data retention is improved, but memory cell stress increases and electrical characteristics deteriorate
Solution Approach 1:
The patent copies data from a first memory block to a second memory block before refreshing. This copying process allows the original memory block to be refreshed with potentially different data patterns, reducing the cumulative stress on the same memory cells while maintaining data integrity through the backup copy.
Solution Approach 2:
The patent changes data patterns during refresh operations by utilizing multiple memory blocks and varying the data written back to memory cells. This parameter change in data patterns prevents identical stress conditions from recurring on the same memory cells, thereby reducing cumulative stress while maintaining refresh effectiveness.
2Reliability
If refresh operation is performed by reprogramming the same data back into memory cells, then data is retained, but threshold voltage distribution deteriorates
Solution Approach 1:
The patent changes the data pattern written back during refresh operations by utilizing a second memory block as an intermediate storage. This parameter change in the refresh data pattern helps maintain threshold voltage distribution by preventing identical stress conditions from degrading the memory cells in the same manner repeatedly.
Solution Approach 2:
By copying data to a second memory block and then using this copy for refresh operations, the patent enables variation in the refresh process. This copying mechanism allows for different data patterns to be written back to memory cells, preserving threshold voltage distribution characteristics while maintaining data retention.
Data Source
AI summary
The present invention relates to a semiconductor device, including memory blocks suitable for storing data, peripheral circuits suitable for refreshing the memory blocks, and a control circuit suitable for controlling the peripheral circuits to change data stored in a first memory block among the memory blocks and refresh the first memory block with changed data, and an operating method thereof.