3D Semiconductor Memory Structural Integrity via Segmented Support
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Solution Overview
Problem
The manufacturing process of three-dimensionally stacked semiconductor memory cells faces challenges in maintaining structural integrity and yield due to pressure-induced defects and deformation during replacement processing, where the stepped portions of conductors and supporting columns can bend or break.
Innovation Solution
The implementation of two supporting portions in a line shape and an oxide film-nitride film stack section between them, which acts as a column to maintain the three-dimensional structure, prevents defects and increases the strength of the structure, thereby enhancing yield without altering the manufacturing process or increasing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensionally stacked memory cells are manufactured, then memory capacity is improved, but structural integrity deteriorates due to pressure-induced defects and deformation
Solution Approach 1:
The patent divides the stacked structure into multiple segments by introducing supporting portions between different layers of conductors and insulators. These supporting portions act as structural segments that reinforce the overall three-dimensional stack, preventing deformation and breakage while maintaining high memory capacity through the stacked configuration.
2Reliability
If replacement processing is performed to form conductors, then electrical connectivity is improved, but manufacturing precision deteriorates due to bending and breaking of stepped portions
Solution Approach 1:
The patent introduces supporting portions before the replacement processing step. These pre-installed supporting portions provide structural reinforcement during the subsequent conductor formation process, preventing the stepped portions from bending or breaking when pressure is applied during replacement processing, thus maintaining manufacturing precision while achieving reliable electrical connectivity.
3Strength
If supporting portions are added to maintain structure, then structural integrity is improved, but device complexity increases
Solution Approach 1:
The supporting portions serve multiple functions simultaneously: they provide structural reinforcement to prevent deformation, act as spacers to maintain appropriate distances between conductors, and serve as attachment points for subsequent layers. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while effectively improving structural integrity.
Data Source
AI summary
A semiconductor memory includes a stack section comprising a first area including a plurality of first conductors and a plurality of first insulators alternately stacked in a first direction and memory cells, and a second area including respective end portions of the plurality of stacked first conductors and the plurality of stacked first insulators, a plurality of contact plugs respectively reaching the plurality of first conductors in the second area, first and second supporting portions configured respectively to pass through the stack section in the first direction and arranged in a second direction, which crosses the first direction, in the second area, and a layer between respective adjacent first insulators, among the plurality of first insulators that are stacked, between the first supporting portion and the second supporting portion, wherein the layer is made of a material that is different from that of the first conductors.