Self-repair Device for Semiconductor Memory with Row and Column Redundancy
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Solution Overview
Problem
Conventional self-repair devices for semiconductor memory devices can only perform row repair operations, leading to poor repair success rates due to the inability to address column-related failures and requiring numerous fuse registers for storing fuse sets, which increases layout area and inefficiency.
Innovation Solution
A self-repair device that includes an ARE array block for storing fail addresses, an ARE control block for controlling fuse rupture operations, and a redundancy block for performing row and column redundancy operations based on input addresses, allowing for improved repair efficiency by determining the nature of failures and selectively using appropriate fuse sets.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If only row repair operations are performed in conventional self-repair devices, then the device complexity is reduced, but the repair success rate deteriorates due to inability to address column-related failures
Solution Approach 1:
The self-repair device is enhanced to perform both row repair operations and column repair operations, making it multi-functional. The redundancy control circuit can now handle both row-related failures and column-related failures by selectively activating row repair or column repair based on the type of failure detected, thereby improving repair success rate without requiring separate dedicated devices for row and column repairs
2Reliability
If numerous fuse registers are used to store fuse sets for respective banks, then the repair capability is improved, but the layout area increases
Solution Approach 1:
The invention extracts and loads only the necessary fuse sets into fuse registers after testing identifies actual failures. Instead of pre-loading all possible fuse sets for all banks, the system selectively loads only those fuse sets corresponding to failed addresses, thereby reducing the number of fuse registers needed and minimizing layout area while maintaining full repair capability for actual failures
Solution Approach 2:
The system performs testing first to identify failed addresses, then loads the required fuse sets into fuse registers based on the test results. This preliminary testing action allows the system to determine exactly which fuse sets are needed before loading them, avoiding the need to pre-load all possible fuse sets and reducing the number of fuse registers required
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables increased repair success rates by performing row and column redundancy operations, reducing the number of fuse registers needed and minimizing layout area by loading non-used fuse sets only after testing, thus optimizing semiconductor device repair efficiency.
Implementation Method 1
an ARE (array rupture electrical fuse) array block configured to store fail addresses
Implementation Method 2
an ARE control block configured to control a repair operation of fuse sets according to the fail addresses
Data Source
AI summary
A self-repair device includes an ARE (array rupture electrical fuse) array block configured to store fail addresses; an ARE control block configured to control a repair operation of fuse sets according to the fail addresses, compare a plurality of the fail addresses, and determine a failed state; and a redundancy block configured to store fuse data of the fail addresses, compare an input address with the fail addresses, and control row and column redundancy operations.