Static Storage TRIZ Cases

Redundant decoder control circuit activates storage lines based on test addresses within the memory cell array.

The system recovers non-defective memory units from retired groups by applying program pulses, preventing excessive loss of usable media capacity.

Channel control logic distributes code words from a buffer to available decoders based on real-time availability status.

A gate contact plug extends through a gate pad region into a pre-formed landing pad within a substrate insulating layer.

A semiconductor test device rewrites pattern memory during operation to reduce hardware requirements.

Test circuits compare syndromes against parity data to detect ECC defects without adding separate hardware.

A storage system uses SSD peer groups to offload data protection computations from the host CPU.

Interposer separates memory chips from controller, reducing heat transfer and power consumption in AI systems.

A back-side power distribution network supplies control circuits via a substrate-penetrating interconnection, eliminating high aspect ratio contact etching.

Time-multiplexed error detection signals verify access control correctness, preventing data corruption from propagation delays at high operating frequencies.

A memory card connector generates an interrupt signal upon removal to terminate operations before power loss.

Integrated bypass paths route test data through storage portions, reducing circuit complexity and test patterns.

Split rectifier outputs isolate FRAM power delivery from discharge regulation, stabilizing voltage against temperature shifts and intermittent supply.

Test device selects a memory row as a victim through ping-pong row hammer effect to generate errors for ECC counter analysis.

A voltage regulator circuit uses a dead band region where the feedback loop remains inactive to reduce power consumption.

A memory-testing circuit compares data bit columns with reference bit columns to detect defects during read operations.

Local media access circuitry executes preliminary error correction on cross-point memory data, reducing bus transmission energy and processing time.

A memory device remaps defective row indices to redundant rows, preserving logical address access.

A redundancy circuit redirects defective data to a shared ECC array using non-volatile fuses.

A hard disk controller distributes data blocks and redundancy parity across separate platter surfaces to enable physical failure isolation.

A memory system adjusts read levels using a voltage correction circuit to compare pre-error and post-error data frames.

Primary storage controller transmits difference data to secondary storage for parity calculation, eliminating the need to read previous versions of data.

A high voltage discharging circuit drains accumulated charge to ground when power stops, preventing transistor damage in the comparing circuit.

A self-repair device performs row and column redundancy operations using an ARE array block to store fail addresses.

Reconfigurable MBIST circuit uses an adaptive March algorithm to dynamically adjust test sequences.

Dynamic switching allocates a single data output unit to multiple pads, resolving the contradiction between test coverage and device complexity.

A memory controller stores error correction code checkbits in a secondary static random access memory to enable independent verification of data integrity.

Grouping flash blocks with dedicated redundancy recovers uncorrectable errors while releasing unused space to maintain storage capacity.

An evaluation unit detects signal levels to control a switching unit, enabling dynamic port width configuration that reduces manufacturing complexity.

A nonvolatile memory array scrambles identical data with distinct transformations across devices to generate unique storage patterns.

A memory module assembly method stores defect data in persistent memory to manage defective cells.

A semiconductor memory device integrates a parity check unit to verify command signals before processing.

A flash memory controller implements wordline and finger dimensional error correction to generate check codes for super blocks.

Sequential chunk allocation balances reconstruction loads across storage disks, reducing recovery times during degraded mode operations.

A three-dimensional semiconductor memory device uses a stopper layer to ensure uniform length of semiconductor patterns and electrodes.

Segmenting single-bit errors within DRAM chips reduces system ECC overhead while maintaining reliability across multiple memory channels.

A semiconductor storage device sets error correction code storage areas via external control signals to align with existing system address mappings.

A configurable error correction code engine in DRAM repurposes bank array bits for host metadata or reliability operations.

Back-side metal lines reduce electrical connection resistance in one-time programmable memory cells.

A recursively determined invertible set approach identifies faulty memory cells and inverts their values during read operations to correct data.

Segmenting the reference buffer into closed-loop and open-loop branches stabilizes voltages under low supply voltage while reducing power consumption.

Dual signal generation units latch test mode signals during voltage resets to maintain semiconductor device test operations.

A pattern mask register in an MBIST circuit masks non-failing patterns to skip redundant re-execution.

A data channel aging circuit uses a strobe unit to induce voltage stress across memory channels.

A memory device generates test patterns internally using a data pattern generator and deserializer to support high-speed production.

A memory controller generates parity for partial data blocks to optimize storage efficiency in non-volatile memory systems.

A memory control circuit unit updates default hard-decision voltage levels using estimating parameters from soft-bit information.

Synchronizing the substrate bias pump with elevated voltage detection prevents abnormal rising of the substrate bias voltage and reduces current loss.

ACT mask circuit suppresses activation signals during post-package repair mode, preventing inadvertent fuse blowing from illegal commands.