Semiconductor Memory Transistor Sidewall Insulating Film Width
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Solution Overview
Problem
Nonvolatile memory devices face challenges in achieving sufficient programming speed due to the limited capacitance of individual memory transistors, which can result in prolonged programming times, especially as memory capacity increases.
Innovation Solution
The semiconductor device design includes a memory region with a first transistor having a wider sidewall insulating film compared to a logic region transistor, enhancing charge injection efficiency and programming speed by increasing the width of the sidewall insulating film in the memory transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the sidewall insulating film thickness is increased to reduce hot carrier injection efficiency, then the programming speed of individual memory transistors deteriorates, but the harmful effects of hot carrier injection are reduced
Solution Approach 1:
The patent applies local quality by differentiating the sidewall insulating film thickness between memory transistors and logic transistors. Memory transistors have a thicker sidewall insulating film (first thickness) optimized for charge storage, while logic transistors have a thinner sidewall insulating film (second thickness) optimized for hot carrier injection and programming speed. This localized differentiation allows each transistor type to have optimal performance for its specific function without compromising the other.
2Quantity of substance
If the memory capacity is increased, then the overall capacitance increases, but the programming time extends beyond system requirements
Solution Approach 1:
The patent implements local quality by creating distinct sidewall insulating film structures for memory transistors versus logic transistors. Memory transistors utilize a thicker sidewall insulating film that provides enhanced charge storage capacitance, while logic transistors employ a thinner film that maintains high programming speed. This localized structural differentiation enables the memory array to achieve high capacity through increased cell count without sacrificing individual transistor programming performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves the programming speed of the memory transistor by increasing the resistance variation when charges are injected, allowing for faster programming and reducing overall programming time, even as memory capacity grows.
Implementation Method 1
a MOS (Metal Oxide Semiconductor) type field effect transistor storing information by accumulating charges (hot carriers) in the sidewall insulating film of a gate electrode sidewall
Implementation Method 2
the width of the first sidewall insulating film is larger than the width of the second sidewall insulating film... improves the programming speed of the memory transistor by increasing the resistance variation when charges are injected
Data Source
AI summary
There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.