Semiconductor Device Metal Layer Parasitic Capacitance Reduction
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Solution Overview
Problem
Unwanted semiconductor layers in semiconductor devices can decrease performance and interfere with manufacturing by causing parasitic capacitance and structural issues during bonding, leading to delays in signal transmission and potential disconnection or increased resistance.
Innovation Solution
The semiconductor device design includes a metal layer with specific portions disposed on the interlayer insulating film without the semiconductor layer interposed between them and the insulating film, reducing parasitic capacitance and structural steps that could cause disconnection or increased resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the metal layer is disposed on the semiconductor layer, then the semiconductor layer provides structural support and electrical connection, but parasitic capacitance increases and signal transmission speed decreases
Solution Approach 1:
The patent extracts the unwanted semiconductor layer from the bonding pad region by forming the metal layer directly on the interlayer insulating film in the bonding pad area. This removes the source of parasitic capacitance while maintaining the semiconductor layer in functional regions where it provides necessary structural support and electrical connection.
2Speed
If the metal layer is disposed on the interlayer insulating film without semiconductor layer, then parasitic capacitance is reduced and signal transmission efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by having the metal layer disposed on different substrates in different regions: in the bonding pad region, the metal layer is disposed directly on the interlayer insulating film to reduce parasitic capacitance, while in functional regions, the metal layer is disposed on the semiconductor layer to maintain structural support and electrical connection. This region-specific approach optimizes performance without unnecessarily complicating manufacturing.
3Reliability
If the semiconductor layer is removed from the bonding pad region, then bonding reliability is improved and disconnection risk is reduced, but additional manufacturing steps are required
Solution Approach 1:
The patent segments the metal layer into multiple portions with different configurations: a first portion disposed on the semiconductor layer in functional regions, and a second portion (bonding pad) disposed directly on the interlayer insulating film in the bonding pad region. This segmentation allows the bonding pad area to have optimized bonding reliability while the functional areas maintain structural integrity, all within a single integrated device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces parasitic capacitance and structural issues, enhancing signal transmission efficiency and reliability by eliminating the semiconductor layer between the metal layer and the interlayer insulating film, thereby improving the overall performance and manufacturing efficiency of the semiconductor device.
Implementation Method 1
Unwanted semiconductor layers in semiconductor devices can decrease performance and interfere with manufacturing by causing parasitic capacitance
Data Source
AI summary
A semiconductor device includes a first substrate, a first insulating film disposed on the first substrate, and a semiconductor layer disposed on the first insulating film. The semiconductor device further includes a metal layer with a first portion and a second portion. The first portion is disposed on the semiconductor layer, and the second portion includes a bonding pad and is disposed on the first insulating film without the semiconductor layer interposed between the second portion and the first insulating film.