Semiconductor Module With Sealed PCM Chamber for Overload Heat Buffering
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Solution Overview
Problem
Existing semiconductor modules face challenges in integrating thermal capacities effectively due to their flat structure, leading to reduced reliability under high and short-term overload conditions, as phase change materials used in prior art tend to escape and age prematurely, reducing thermal capacity and module reliability.
Innovation Solution
A semiconductor module design featuring a phase change material integrated in a closed, continuous hollow chamber structure or embedded in a matrix within the substrate, ensuring a thermally conductive connection with the semiconductor element, which prevents material escape and aging, thereby maintaining thermal capacity and enhancing module reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If phase change material is used in open cavities of wiring support, then thermal capacity is improved, but material escape and accelerated ageing occur reducing reliability
Solution Approach 1:
The patent extracts the phase change material from open cavities and places it in a sealed hollow chamber structure, separating the thermal management function from the open environment to prevent material escape and degradation
Solution Approach 2:
The patent creates a sealed environment that protects the phase change material from degradation, effectively making it a long-lasting component rather than a short-lived one that escapes and degrades in open cavities
2Use of energy by moving object
If phase change material is placed in open cavities, then thermal energy absorption is improved, but thermal capacity is reduced over time due to escape and ageing
Solution Approach 1:
The phase change material is extracted from the open cavity environment and placed in a sealed hollow chamber, preserving its thermal energy absorption capability while preventing degradation over time
Solution Approach 2:
The patent provides excessive protection by sealing the phase change material in a closed chamber, ensuring that the material retains its full thermal capacity for the entire operational lifetime of the module
3Ease of manufacture
If flat structure packaging is used, then manufacturing simplicity is improved, but integration of thermal capacities is difficult
Solution Approach 1:
The patent nests the hollow chamber structure containing the phase change material within the existing substrate structure, integrating thermal management capabilities into the flat packaging without adding external components
Solution Approach 2:
The patent utilizes the vertical dimension within the flat substrate by creating hollow chambers that extend through the substrate thickness, enabling thermal capacity integration while maintaining the overall flat packaging structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively stores heat from the semiconductor element, maintains thermal capacity over time, and improves the reliability of the semiconductor module by preventing phase change material escape and aging, ensuring efficient thermal management.
Implementation Method 1
A phase change material (PCM) is known to be a material characterized by high melting enthalpy and thus capable of absorbing a considerable amount of thermal energy during the transition from the solid state to the liquid state, known as phase change.
Implementation Method 2
absorbing a considerable amount of thermal energy during the transition from the solid state to the liquid state, known as phase change
Implementation Method 3
is in thermally conductive connection with the semiconductor element
Data Source
AI summary
A semiconductor module includes a first substrate, a second substrate having a closed, in particular continuous, hollow chamber structure, and a semiconductor element having a first side connected to the first substrate in a planar manner and a second side which faces away from the first side and is connected to the second substrate in a planar manner. A phase change material is arranged in the hollow chamber structure of the second substrate and in thermally conductive connection with the semiconductor element.