Power Semiconductor Module Heat Dissipation via Simultaneous Bonding
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Solution Overview
Problem
The existing power semiconductor modules suffer from reduced heat radiation efficiency due to ceramic insulating layers in DBC substrates, leading to overheating and operational errors, and existing solutions with improved radiation efficiency are complex and costly to manufacture.
Innovation Solution
A power semiconductor module with a copper buffer and lead frame, where the buffer and lead frame are bonded simultaneously with the semiconductor chip using specific solder compositions and a vacuum oven process, enhancing heat transfer and reducing manufacturing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a ceramic insulating layer is formed between the upper foil and lower foil of the DBC substrate, then electrical insulation is improved, but heat transfer is slowed down, degrading heat radiation efficiency
Solution Approach 1:
The invention removes the ceramic insulating layer from between the upper and lower foils of the DBC substrate. By extracting this heat-blocking component, heat can transfer directly through the copper foils without encountering thermal resistance from the ceramic layer, thereby resolving the contradiction between electrical insulation and heat radiation efficiency.
Solution Approach 2:
The invention uses a composite structure where the upper and lower copper foils are directly coupled to the DBC substrate without ceramic insulation. This composite approach allows the copper material's superior thermal conductivity to dominate the heat transfer path, while electrical insulation is maintained through the DBC substrate's inherent properties and bonding structure.
2Loss of energy
If an improved power semiconductor module with better heat radiation efficiency is designed, then heat transfer is improved, but the structure becomes complex and manufacturing cost increases
Solution Approach 1:
The invention simplifies the DBC substrate structure by removing the ceramic insulating layer, reducing structural complexity while improving heat radiation efficiency. This extraction of unnecessary components achieves better thermal performance without adding manufacturing complexity.
Solution Approach 2:
The invention changes the structural parameters of the DBC substrate by eliminating the ceramic layer, thereby altering the thermal conduction path. This parameter change improves heat radiation efficiency while simultaneously reducing manufacturing complexity and cost.
3Manufacturing precision
If the semiconductor chip, buffer, and lead frame are bonded in separate steps, then bonding quality can be controlled, but manufacturing time increases
Solution Approach 1:
The invention combines the bonding of the semiconductor chip to the buffer and the buffer to the lead frame into a single simultaneous bonding step. This merging of operations maintains bonding quality through unified process control while significantly reducing total manufacturing time compared to sequential bonding steps.
Solution Approach 2:
The invention implements continuous bonding action by performing both bonding operations simultaneously in one continuous process step. This eliminates idle time between bonding operations while maintaining quality through sustained process control, resolving the time-quality trade-off.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves heat radiation efficiency and simplifies the manufacturing process, ensuring even heat dissipation and reducing bonding time, thus addressing the inefficiencies and complexity of previous designs.
Implementation Method 1
an upper surface thereof is bonded onto a bottom surface of the semiconductor chip by melting an upper solder, the lead frame has a plate shape having a predetermined thickness and is formed of copper, and an upper surface thereof is bonded onto a bottom surface of the buffer by melting a lower solder
Implementation Method 2
an upper surface thereof is bonded onto a bottom surface of the semiconductor chip by melting an upper solder
Implementation Method 3
a buffer which is coupled to the semiconductor chip to radiate heat emitted from the semiconductor chip
Data Source
AI summary
The present invention relates to a power semiconductor module in which heat from the semiconductor chip is radiated not only through the buffer, but also through the lead frame to increase heat radiation efficiency, and the semiconductor chip, the buffer, and the lead frame are simultaneously bonded to increase efficiency of bonding work, and a method for manufacturing the same.