Semiconductor Electrode Plating Structure for Ni Adhesion Reliability
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Solution Overview
Problem
The low adhesion of organic insulating layers to Ni plating layers results in gaps forming between the Ni plating layer and the electrode, leading to reduced reliability.
Innovation Solution
A semiconductor device structure is designed with an inorganic insulating layer covering the electrode, an organic insulating layer surrounding the inorganic layer with a second opening, and an Ni plating layer covering the electrode and the inner peripheral edge of the inorganic insulating layer, enhancing adhesion and reducing gap formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an Ni plating layer is formed on an electrode exposed from an opening of the organic insulating layer, then the Ni plating layer can be connected to the electrode, but gaps form between the Ni plating layer and the organic insulating layer due to low adhesion, reducing reliability
Solution Approach 1:
An inorganic insulating layer is introduced as an intermediary between the organic insulating layer and the Ni plating layer. The inorganic insulating layer has high adhesion to Ni, serving as a mediator that prevents gap formation while the organic insulating layer maintains its protective function. This intermediary layer resolves the adhesion problem without compromising the overall structure.
Solution Approach 2:
The patent uses a composite structure combining organic and inorganic insulating layers. The organic insulating layer provides protection and insulation, while the inorganic insulating layer provides high adhesion to Ni. This composite approach leverages the advantages of both materials to solve the adhesion problem.
2Device complexity
If the Ni plating layer is formed directly on the organic insulating layer, then the structure is simpler, but adhesion is poor causing gaps that extend toward the electrode
Solution Approach 1:
The inorganic insulating layer serves as a mediator between the organic insulating layer and the Ni plating layer. Although it adds a layer to the structure, it prevents gap formation and improves adhesion significantly, making the overall structure more reliable despite the increased complexity.
Solution Approach 2:
The patent changes the material parameter of the insulating layer from purely organic to a composite of organic and inorganic layers. This parameter change (material composition) fundamentally improves the adhesion characteristics while maintaining the insulating function.
3Reliability
If the organic insulating layer completely covers the electrode, then protection is improved, but the Ni plating layer cannot be formed on the electrode
Solution Approach 1:
The insulating layer is segmented into two parts: the organic insulating layer that provides protection, and the inorganic insulating layer with openings that allows Ni plating formation. This segmentation enables both protection and manufacturability by assigning different functions to different parts of the insulating structure.
Solution Approach 2:
The inorganic insulating layer has different local qualities: regions with openings allow Ni plating formation on the electrode, while other regions provide protection. This local differentiation of quality enables simultaneous achievement of protection and manufacturability.
Data Source
AI summary
A semiconductor device includes a chip, an electrode that is formed on the chip, an inorganic insulating layer that covers the electrode and has a first opening exposing the electrode, an organic insulating layer that covers the inorganic insulating layer, has a second opening surrounding the first opening at an interval from the first opening, and exposes an inner peripheral edge of the inorganic insulating layer in a region between the first opening and the second opening, and an Ni plating layer that covers the electrode inside the first opening and covers the inner peripheral edge of the inorganic insulating layer inside the second opening.